Journal ArticleDOI
Crystal size and temperature measurements in nanostructured silicon using Raman spectroscopy
G. Viera,S. Huet,Laifa Boufendi +2 more
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In this article, a detailed structural characterization by Raman spectroscopy of hydrogenated amorphous silicon and of nanostructured silicon (ns-Si:H) thin films grown in radio-frequency plasma was presented.Abstract:
In this work we present a detailed structural characterization by Raman spectroscopy of hydrogenated amorphous silicon (a-Si:H) and of nanostructured silicon (ns-Si:H) thin films grown in radio-frequency plasma. The ns-Si:H thin films, also called polymorphous Si thin films, consist of a two-phase mixture of amorphous and ordered Si. The Raman spectra were measured at increasing laser intensities. Very low laser power densities (∼1 kW/cm2) were used to thoroughly analyze the structure of as-deposited thin films. Higher Raman laser powers were found to induce the crystallization of the films, which was characterized by the appearance of a sharp peak around 500 cm−1. This was attained faster in the ns-Si:H than in the conventional a-Si:H thin films because the silicon-ordered particles cause a heterogeneous nucleation process in which they act as seeds for crystallization. The laser power densities for film crystallization, crystal size, and surface temperature were determined from this Raman analysis. The ...read more
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Journal ArticleDOI
Size dependence of nanostructures: Impact of bond order deficiency
Chang Q. Sun,Chang Q. Sun +1 more
TL;DR: The BOLS correlation mechanism has been initiated and intensively verified as discussed by the authors, which has enabled the tunability of a variety of properties of a nanosolid to be universally reconciled to the effect of bond order deficiency of atoms at sites surrounding defects or near the surface edges of the nano-material.
Journal ArticleDOI
A selective laser melting and solution heat treatment refined Al-12Si alloy with a controllable ultrafine eutectic microstructure and 25% tensile ductility
Xiaopeng Li,Xiaojun Wang,Xiaojun Wang,Martine Saunders,Alexandra Suvorova,Lai-Chang Zhang,Yujing Liu,Minghao Fang,Zhaohui Huang,Timothy B. Sercombe +9 more
TL;DR: In this article, an as-fabricated Al-12Si alloy with controllable ultrafine microstructure and excellent mechanical properties can be achieved by using selective laser melting and subsequent solution heat treatment.
Journal ArticleDOI
Electrical, Thermal, and Mechanical Characterization of Silicon Microcantilever Heaters
Jungchul Lee,Thomas E. Beechem,Tanya L. Wright,Brent A. Nelson,Samuel Graham,William P. King +5 more
TL;DR: In this paper, the authors describe detailed mechanical, electrical, and thermal characterization and calibration of AFM cantilevers having integrated solid-state heaters, which have been applied to metrology, thermophysical property measurements, and nanoscale manufacturing.
Journal ArticleDOI
Fast lithium growth and short circuit induced by localized-temperature hotspots in lithium batteries
Yangying Zhu,Jin Xie,Jin Xie,Allen Pei,Bofei Liu,Yecun Wu,Dingchang Lin,Jun Li,Hansen Wang,Hao Chen,Jinwei Xu,Ankun Yang,Chun-Lan Wu,Hongxia Wang,Wei Chen,Yi Cui,Yi Cui +16 more
TL;DR: It is discovered that temperature hotspots can induce significant lithium metal growth as compared to the surrounding lower temperature area due to the locally enhanced surface exchange current density.
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Invited Article: Simultaneous mapping of temperature and stress in microdevices using micro-Raman spectroscopy.
TL;DR: This analysis shows that Raman spectroscopy has the potential to measure both evolving temperature and stress fields in devices using a single optical measurement.
References
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Journal ArticleDOI
The one phonon Raman spectrum in microcrystalline silicon
H. Richter,Z. P. Wang,Lothar Ley +2 more
TL;DR: In this paper, a relaxation in the q-vector selection rule for the excitation of the Raman active optical phonons was proposed to increase the red shift and broadening of the signal from microcrystalline silicon films.
Journal ArticleDOI
The effects of microcrystal size and shape on the one phonon Raman spectra of crystalline semiconductors
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Journal ArticleDOI
Anharmonic effects in light scattering due to optical phonons in silicon
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Journal ArticleDOI
Temperature Dependence of Raman Scattering in Silicon
TL;DR: In this article, the authors measured the linewidth and the frequency of the q = 0 optical phonon in silicon over the temperature range of 20-770, and deduced an absolute halfwidth of 2.1
Journal ArticleDOI
Raman shifts in Si nanocrystals
TL;DR: In this paper, the relation between the Raman shift and the size for Si spheres and columns was established, from which the size of Si nanocrystals can be obtained for a given Raman shifts or vice versa.
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