Journal ArticleDOI
Deep level defects in narrow gap semiconductors
TLDR
In this article, the authors propose modeles theoriques des defauts a niveaux profonds dans les semiconducteurs a bande interdite etroite de type IV-VI and II-VI.Abstract:
Mise au point. Methodes experimentales. Modeles theoriques des defauts a niveaux profonds dans les semiconducteurs a bande interdite etroite de type IV-VI et II-VIread more
Citations
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Journal ArticleDOI
Mixed-valence impurities in lead telluride-based solid solutions
TL;DR: In this paper, experimental data on impurity states in narrow-gap lead telluride-based semiconductors are summarized and theoretical models describing the nontrivial properties of such states are presented.
Journal ArticleDOI
Deep defect level engineering: a strategy of optimizing the carrier concentration for high thermoelectric performance
Qian Zhang,Qichen Song,Xinyu Wang,Jingying Sun,Qing Zhu,Keshab Dahal,Xi Lin,Feng Cao,Jiawei Zhou,Shuo Chen,Gang Chen,Jun Mao,Zhifeng Ren +12 more
TL;DR: In this paper, a temperature-dependent carrier concentration can be realized by simultaneously introducing shallow and deep defect levels in PbTe, where iodine acts as the shallow donor level that supplies sufficient electrons and indium builds up the localized half-filled deep defect state in the band gap.
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Weak Electron Phonon Coupling and Deep Level Impurity for High Thermoelectric Performance Pb1− xGaxTe
Xianli Su,Xianli Su,Shiqiang Hao,Trevor P. Bailey,Si Wang,Si Wang,Ido Hadar,Gangjian Tan,Tze-Bin Song,Qingjie Zhang,Ctirad Uher,Chris Wolverton,Xinfeng Tang,Mercouri G. Kanatzidis +13 more
Journal ArticleDOI
Defects Engineering with Multiple Dimensions in Thermoelectric Materials
TL;DR: The defect-related physical effects on both band structure and transport behavior of carriers and phonons when inducing different types of defects are classified and summarized.
Journal ArticleDOI
Infrared Photoluminescence in Narrow‐Gap Semiconductors
TL;DR: In this article, the photoluminescence infra-rouge dans des composes II-VI a bande interdite etroite, and plus specialement au Hg 1-x Cd x Te.
References
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Book
Introduction to solid state physics
TL;DR: In this paper, the Hartree-Fock Approximation of many-body techniques and the Electron Gas Polarons and Electron-phonon Interaction are discussed.
Journal ArticleDOI
Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
TL;DR: Deep Level Transformer Spectroscopy (DLTS) as discussed by the authors is a high-frequency capacitance transient thermal scanning method useful for observing a wide variety of traps in semiconductors, which can display the spectrum of traps as positive and negative peaks on a flat baseline as a function of temperature.
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Electron Correlations in Narrow Energy Bands. III. An Improved Solution
TL;DR: In this article, a more accurate solution of the model discussed in paper I is obtained, which predicts a finite lifetime for the pseudo-particles and also the Mott insulator-conductor transition.
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Model for the Electronic Structure of Amorphous Semiconductors
TL;DR: In this article, it was pointed out that a model which agrees well with the observed properties of semiconducting glasses is an attractive Hubbard model of localized states, and it was also proposed that the one-electron excitation spectrum is wholly, or almost wholly, extended, and all observed gaps are identical with the mobility gap.