Journal ArticleDOI
Deep level transient spectroscopic study of DX center in heavily doped ion-implanted GaAs
Subhasis Ghosh,Vikram Kumar +1 more
TLDR
In this paper, deep level transient spectroscopy (DLTS) has been used to investigate the Si-related DX center in heavily doped ion-implanted GaAs, and the activation energies of these two two levels are 270 and 315 meV.About:
This article is published in Solid State Communications.The article was published on 1996-04-01. It has received 3 citations till now. The article focuses on the topics: Deep-level transient spectroscopy.read more
Citations
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Journal ArticleDOI
Magnetic properties of exactly solvable doubly decorated Ising-Heisenberg planar models
Jozef Strečka,Michal Jaščur +1 more
TL;DR: In this article, a class of exactly solvable doubly decorated planar models consisting both of the Ising- and Heisenberg-type atoms is introduced and exact solutions for the ground state, phase diagrams, and basic physical quantities are derived and discussed.
Journal ArticleDOI
Slow Relaxation of Nonequilibrated Photo-carriers in Semiconductors
TL;DR: In this article, the microscopic mechanisms responsible for slow relaxation of nonequilibrated photo-carriers in three technologically important semiconductors, Al x Ga1 −x As, SiC and GaN, are explored.
Journal ArticleDOI
Evidence for two Si-related DX like centers in AlxGa1−xAs and GaAs
Subhasis Ghosh,Vikram Kumar +1 more
TL;DR: In this article, the authors present a critical analysis of the deep level spectroscopy of electron emission from Si-related DX centers in AlxGa1−xAs and GaAs.
References
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Journal ArticleDOI
Theory of the atomic and electronic structure of DX centers in GaAs and AlxGa1-xAs alloys.
D. J. Chadi,Kee-Joo Chang +1 more
TL;DR: In this article, the authors proposed that the negatively charged defect center in GaAs is a negatively charged center resulting from the "reaction" $2{d}^{0}\ensuremath{\rightarrow}{d}€+}+D{X}^{\ENSuremath{-}}$ where $d$ represents a substitutional donor.
Journal ArticleDOI
Electron localization by a metastable donor level in n-GaAs: A new mechanism limiting the free-carrier density.
Journal ArticleDOI
Investigation of the DX center in heavily doped n -GaAs
Duncan K. Maude,J. C. Portal,L. Dmowski,T.J. Foster,Laurence Eaves,Marshall I. Nathan,Moty Heiblum,J. J. Harris,R.B. Beall +8 more
TL;DR: Mise en evidence de the formation d'un niveau donneur resonnant entre les minimums de bandes de conduction Γ et L, a une concentration comparable a celle de l'impurete.
Journal ArticleDOI
Effect of local alloy disorder on emission kinetics of deep donors (DX centers) in AlxGa1−xAs of low Al content
TL;DR: In this paper, the authors report measurements by deep level transient spectroscopy of electron emission from the deep donor level (DX center) in Si-doped GaAs and AlxGa1−xAs of very low Al content.