Journal ArticleDOI
Dependence of the read diode characteristics on the current multiplication factor in the avalanche zone
TLDR
In this paper, the effect of the finite current multiplication factor in the avalanche zone on the impedance of a Read diode has been investigated and the magnitude of negative resistance has been found to decrease with the lowering of the multiplication factor while the reactance does not appreciably change.Abstract:
The effect of the finite current multiplication factor in the avalanche zone on the impedance of a Read diode has been investigated. The magnitude of the negative resistance has been found to decrease with the lowering of the multiplication factor M while the reactance does not appreciably change. The avalanche and resonant frequencies become different when M becomes finite and are markedly dependent on it.read more
Citations
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Journal ArticleDOI
Variation of high frequency negative resistance of silicon N+pp+ and GaAs p+nn+ IMPATT diodes with enhancement of reverse saturation current
TL;DR: In this paper, the effect of electron and hole reverse saturation currents on the negative resistance profiles, the admittance characteristics, and the device quality factor (Q) of silicon n+pp+ and GaAs p+nn+ IMPATTs operating in the Ku-band frequencies was investigated.
Journal ArticleDOI
Effect of electron- and hole-dominant photocurrent on the millimetre wave properties of an indium phosphide IMPATT diode at a 94 GHz window under optical illumination
J P Banerjee,R Mukherjee +1 more
TL;DR: In this paper, the effect of photogenerated predominant electron or hole components of leakage current on the admittance and negative resistance properties of a 94 GHz p+nn+ indium phosphide IMPATT diode under optical illumination is presented.
Proceedings ArticleDOI
Electrically Shorted Semiconductor Junctions Utilized as Programmable Read Only Memory Elements
TL;DR: In this paper, a shorted semiconductor junction was used as a reliable PROM storage element and the reliability of the shorted junction was investigated. But, the reliability was not evaluated on actual PROM devices.
Journal ArticleDOI
Effect of finite current multiplication factor in the avalanche zone on the high-frequency noise properties of read diodes
TL;DR: In this article, the high-frequency noise properties of a Read diode, whose current multiplication factor in the avalanche zone can be controlled and is finite, have been analyzed, and it is shown that the open-circuit noise voltage and the noise figure of the diode are reduced with the lowering of the current multiplication factors.
Reference EntryDOI
Transit Time Devices
TL;DR: In this paper, the authors present a detailed analysis of the DC and small-signal properties of Impatt Diodes of any Doping profile.The sections in this article are
References
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Journal ArticleDOI
A proposed high-frequency, negative-resistance diode
TL;DR: In this paper, a semiconductor diode designed to operate as an oscillator when mounted in a suitable microwave cavity is described and analyzed, and it appears possible to obtain over 20 watts of ac power in continuous operation at 5 kmc.
Journal ArticleDOI
Electronic tuning effects in the read microwave avalanche diode
M. Gilden,M.E. Hines +1 more
TL;DR: In this article, the negative-resistance avalanche diode has been examined in detail for the small-signal case and the space-charge wave approach has been used in the analysis leading directly to a simple equivalent circuit.
Journal ArticleDOI
Saturation current and large-signal operation of a read diode
TL;DR: In this article, the effect of the magnitude of the saturation current was investigated theoretically within the framework of Read's original analysis, and it was shown that with saturation currents as high as 1/100 of the bias current, the original efficiency prediction of 30 per cent was halved.
Journal ArticleDOI
Minority carrier storage and oscillation efficiency in read diodes
TL;DR: In this paper, a Schottky barrier is used to replace the p-n junction in order to avoid the back-diffuse storage effect of minority carriers in a Read diode.
Journal ArticleDOI
Analysis of space-charge induced negative resistance in linearly graded avalanching silicon p-n junctions
TL;DR: In this article, a linearly graded silicon p-n junction diode has been analyzed under avalanche breakdown condition taking into account the effect of impurity and mobile charge density on the electric field.