Journal ArticleDOI
Depth resolution in composition profiles by ion sputtering and surface analysis for single-layer and multilayer structures on real substrates
Martin P. Seah,C. Lea +1 more
TLDR
In this article, the depth resolution in compositional profiles of layers on rough substrates, analysed by ion sputtering with Auger electron spectroscopy or other surface analytical techniques, is evaluated in detail to define the precise effect of the substrate.About:
This article is published in Thin Solid Films.The article was published on 1981-07-24. It has received 68 citations till now. The article focuses on the topics: Surface roughness & Surface finish.read more
Citations
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Journal ArticleDOI
Improved depth resolution by sample rotation during Auger electron spectroscopy depth profiling
TL;DR: In this article, a sample holder was equipped with a special mechanism which enables sample rotation during depth analysis, which significantly improves the depth resolution of AES composition-depth profiles, but the results of these first investigations clearly show that sample rotation was not sufficient to obtain real depth profiles.
Journal ArticleDOI
Sputter depth profile analysis of interfaces
TL;DR: In this paper, a brief survey of the technique of sputter depth profiling is given, along with some introductory remarks about aims and scope, historical background and present state of the art, and a summary of optimized experimental conditions for high-resolution depth profiles highlights the use of sample rotation and of low energy primary ions.
Journal ArticleDOI
Characterization of a high depth-resolution tantalum pentoxide sputter profiling reference material
C. P. Hunt,Martin P. Seah +1 more
TL;DR: In this paper, the effects of argon ion beam energy, electron beam current density, sputtering geometry and gas purity effects on etch rate and interface width are measured and interpreted in terms of basic parameters, showing that the material is a wellbehaved model system that is robust and easily used.
Journal ArticleDOI
Compositional depth profiling by sputtering
TL;DR: A summary of the principles of quantitative depth profiling by sputtering in combination with surface analysis methods such as AES, XPS, SIMS and ISS is presented with emphasis on recent advances in improving the depth resolution towards its physical limits as mentioned in this paper.
Journal ArticleDOI
The depth dependence of the depth resolution in composition–depth profiling with Auger Electron Spectroscopy
Martin P. Seah,C. P. Hunt +1 more
TL;DR: In this paper, the depth dependence of the depth resolution in composition-depth profiles using Auger electron spectroscopy is briefly appraised to emphasize some of the different mechanisms operating for different classes of material and to show how the use of a characterized Ta2O5 on Ta reference material can help to optimize depth resolution.
References
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Journal ArticleDOI
Quantitative electron spectroscopy of surfaces: A standard data base for electron inelastic mean free paths in solids
Martin P. Seah,W. A. Dench +1 more
TL;DR: In this paper, a compilation of all published measurements of electron inelastic mean free path lengths in solids for energies in the range 0-10 000 eV above the Fermi level is presented.
Journal ArticleDOI
Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline Targets
TL;DR: In this article, an integrodifferential equation for the sputtering yield is developed from the general Boltzmann transport equation, and solutions of the integral equation are given that are asymptotically exact in the limit of high ion energy as compared to atomic binding energies.
Book
Selected Values of the Thermodynamic Properties of the Elements
TL;DR: In this paper, methods of evaluation, atomic weights, fundamental constants, symbols and units, general references, and properties of the elements are presented. But they do not specify the properties of elements.
Journal ArticleDOI
The depth resolution of sputter profiling
TL;DR: In this article, it is shown that the bulk radiation damage accompanying sputtering events sets ultimate limits to the depth resolution attainable in sputter profiling, and guidelines for selection of projectile species and energies to minimize such mixing are given and numerical estimates for attainable depth resolutions.