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Proceedings ArticleDOI

Design of a CMOS readout circuit for wide-temperature range capacitive MEMS sensors

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TLDR
The proposed capacitance readout interface circuit uses a sigma-delta technique to convert capacitance ratio into a digital output and is suitable to provide a high-accuracy digitized output for capacitive MEMS sensors.
Abstract
We present a capacitance readout interface circuit in bulk CMOS process which is functional at wide temperature range between -55oC to 175oC. The proposed circuit uses a sigma-delta technique to convert capacitance ratio into a digital output and is suitable to provide a high-accuracy digitized output for capacitive MEMS sensors. The circuit is implemented using IBM 0.13μm CMOS technology. Simulation results show that the circuit has excellent stability over wide temperature range, as high as 0.1% accuracy between -55oC to 175oC.

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Citations
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Journal ArticleDOI

Design of a high precision digital interface circuit for capacitive MEMS accelerometers with floating point ADC

TL;DR: An instantaneous floating point analog-to-digital converter (IFP ADC) is proposed to convert the analog frond-end amplifier (AFE) output signal to digital signal and the implementation of digital loop filter realized in a FPGA board can overcome integrator offset issue.
Book ChapterDOI

Integrated MEMS Capacitive Pressure Sensor with On-Chip CDC for a Wide Operating Temperature Range

TL;DR: In this article, the authors presented a new model of capacitive pressure sensor along with a complementary metaloxide-semiconductor (CMOS) along with the stress-strain characterization of poly-SiGe is used to develop and model the structure of the sensor's diaphragm element.
Proceedings ArticleDOI

Design of a sigma-delta modulator in standard CMOS process for wide-temperature applications

TL;DR: A delta-sigma modulator in a standard CMOS process that is designed to operate over a wide temperature range from -55 oC to 225 oC and applies constant-gm biasing technique and other design considerations to compensate performance degradation over temperature variation.
Journal ArticleDOI

Low Temperature Sensitivity CMOS Transconductor Based on GZTC MOSFET Condition

TL;DR: In this paper, the authors define all required conditions to design low thermal sensitivity complementary metal oxide semiconductor (CMOS) transconductors by biasing MOSFETs at Transconductance Zero Temperature Condition (GZTC).
Proceedings ArticleDOI

A 0.7V fully differential first order GZTC-C filter

TL;DR: A 0.7 V supply voltage fully differential first order GZTC-C filter is herein proposed as a Transconductance-Capacitor filter in which its gm stage is biased exactly on transconductance zero-temperature (GZTC) bias condition.
References
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Design Of Analog Cmos Integrated Circuits

TL;DR: The design of analog cmos integrated circuits is universally compatible with any devices to read and is available in the book collection an online access to it is set as public so you can download it instantly.
Journal ArticleDOI

Silicon carbide and diamond for high temperature device applications

TL;DR: The physical and chemical properties of wide bandgap semiconductors silicon carbide and diamond make these materials an ideal choice for device fabrication for applications in many different areas, e.g. light emitters, high temperature and high power electronics, high power microwave devices, micro-electromechanical system (MEMS) technology, and substrates as mentioned in this paper.

An overview of high-temperature electronic device technologies and potential applications

TL;DR: In this paper, the authors summarized physical effects and materials issues important for reliable operation of semiconductor device technologies at high temperatures (> 125° C. They concluded that Si on insulator (SOI) technology can be developed readily for small signal operation up to about 300° C, while GaAs offers little advantage over Si because of poor device isolation and the lack of reliable contacts above 250°C.
Journal ArticleDOI

An overview of high-temperature electronic device technologies and potential applications

TL;DR: In this article, the authors summarize physical effects and materials issues important for reliable operation of semiconductor device technologies at high temperatures (>125/spl deg/C) and review the high-temperature potential of Si, GaAs, other III-V compounds, and SiC.

High Temperature Electronics.

TL;DR: In this paper, the fabrication of a silicon carbide (SiC) junction field effect transistor (J-FET) was shown to be feasible and a simplified building block amplifier was constructed and tested.
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