Journal ArticleDOI
Design of high-efficiency current-mode class-D amplifiers for wireless handsets
Tsai-Pi Hung,A.G. Metzger,Peter J. Zampardi,M. Iwamoto,Peter M. Asbeck +4 more
- Vol. 53, Iss: 1, pp 144-151
Reads0
Chats0
TLDR
In this article, an experimental CMCD amplifier based on GaAs HBTs is reported, with collector efficiency of 78.5% at an output power of 29.5 dBm (0.89 W) at 700 MHz.Abstract:
Design considerations are discussed for current-mode class-D (CMCD) microwave power amplifiers. Factors affecting amplifier efficiency are described analytically and via simulation. Amplifiers are reported that incorporate parallel LC resonators alongside the switching transistors. To reduce parasitic resistance, bond-wires were utilized to implement a high Q inductor in the LC resonator. An experimental CMCD amplifier based on GaAs HBTs is reported, with collector efficiency of 78.5% at an output power of 29.5 dBm (0.89 W) at 700 MHz.read more
Citations
More filters
Journal ArticleDOI
An Efficient Mixed-Signal 2.4-GHz Polar Power Amplifier in 65-nm CMOS Technology
TL;DR: A 65-nm digitally modulated polar transmitter incorporates a fully integrated, efficient 2.4-GHz switching Inverse Class-D power amplifier and simple static predistortion helps the transmitter meet EVM and mask requirements of 802.11g 54-Mb/s WLAN data.
Journal ArticleDOI
Design of CMOS Power Amplifiers
TL;DR: The key technology and circuit design issues facing the design of an efficient linear RF CMOS power amplifier for modern communication standards incorporating high peak-to-average ratio signals are described and two fundamentally different approaches to tackle these problems are presented.
Journal ArticleDOI
A Fully-Integrated Efficient CMOS Inverse Class-D Power Amplifier for Digital Polar Transmitters
TL;DR: A fully-integrated, high-efficiency inverse Class-D power amplifier in 65nm CMOS process, integrated into a mixed-signal polar transmitter and meets the 802.11g (54Mbps 64QAM OFDM) spectral mask and EVM requirements with more than 18% average efficiency.
Journal ArticleDOI
Design Considerations for a Direct Digitally Modulated WLAN Transmitter With Integrated Phase Path and Dynamic Impedance Modulation
TL;DR: A 65-nm digitally modulated polar TX for WLAN 802.11g is fully integrated along with baseband digital filtering and high-bandwidth phase modulation is achieved efficiently with an open-loop architecture.
Journal ArticleDOI
High-Efficiency Microwave and mm-Wave Stacked Cell CMOS SOI Power Amplifiers
TL;DR: In this article, two stacked cell PAs have been implemented in GlobalFoundries 45-nm CMOS SOI technology for high-efficiency microwave and mm-wave CMOS power amplifiers based on a stacked cell approach.
References
More filters
Book
RF Power Amplifiers for Wireless Communications
TL;DR: In this paper, the authors present a power amplifier design for GHz frequency bands at GHz GHz frequency band with overdrive and overdrive-only overdrive modes, as well as a switch-mode Amplifier for RF applications.
Journal ArticleDOI
Class E-A new class of high-efficiency tuned single-ended switching power amplifiers
Nathan O. Sokal,Alan D. Sokal +1 more
TL;DR: In this article, a load network is synthesized to have a transient response which maximizes power efficiency even if the active device switching times are substantial fractions of the a.c. cycle.
Class-e - new class of high-efficiency tuned single-ended switching power amplifiers
TL;DR: Advantages of Class E are unusually high efficiency, a priori designability, large reduction in second-breakdown stress, low sensitivity to active-device characteristics, and potential for high-efficiency operation at higher frequencies than previously published Class-D circuits.
Journal ArticleDOI
Idealized operation of the class E tuned power amplifier
TL;DR: In this paper, the Fourier series analysis of the collector voltage waveform is used to determine component values for optimum operation at an efficiency of 100 percent, and other combinations of component values and duty cycles are also determined.
Proceedings ArticleDOI
RF power amplifiers for wireless communications
TL;DR: In this paper, the performance and other attributes of cellphone RF power amplifiers using Si and GaAs based technologies are reviewed and compared, and a wide variety of semiconductor devices are used in wireless power amplifier.
Related Papers (5)
Class E-A new class of high-efficiency tuned single-ended switching power amplifiers
Nathan O. Sokal,Alan D. Sokal +1 more