Journal ArticleDOI
Development of micromorph tandem solar cells on foil deposited by VHF-PECVD
TLDR
In this article, a bottom cell current limited tandem solar cells on Asahi U-type substrates were fabricated by very high frequency plasma enhanced chemical vapour deposition (VHF-PECVD) in an ultra high vacuum multichamber system called ASTER.Abstract:
Micromorph silicon tandem solar cells on Asahi U-type SnO 2 :F coated glass substrates have been fabricated by very high frequency plasma enhanced chemical vapour deposition (VHF-PECVD) in an ultra high vacuum multichamber system called ASTER. The hydrogenated microcrystalline silicon (μc-Si:H) intrinsic layer (i-layer) was deposited using a capacitively coupled reactor with a shower head cathode at high pressure depletion (HPD) conditions. We made bottom cell current limited tandem cells on Asahi U-type substrates, and they showed an initial efficiency of 10.2% ( V oc = 1.34 V, FF = 0.69). To develop the fabrication process of such tandem cells as flexible solar cells, we began as a first step the deposition of hydrogenated amorphous silicon (a-Si:H) p-i-n single junction cells on aluminium foil (provide by Helianthos b.v.) which was then transferred to plastic substrate at Helianthos b.v. Such a-Si:H cells showed an initial active area efficiency of 7.69% ( V oc = 0.834 V, FF = 0.70) and FF degraded by only 11% after 1000 h of light soaking, showing a high stability of these single junction cells. A minimodule (consisting of 8 cells) on foil delivered an initial aperture area efficiency of 6.7% ( V oc = 6.32 V, FF = 0.65).read more
Citations
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Journal ArticleDOI
Optimization of amorphous silicon thin film solar cells for flexible photovoltaics
TL;DR: In this paper, an amorphous silicon carbide n -layer (n-SiC) was introduced to avoid open-circuit voltage (Voc) and fill factor (FF) losses on textured substrates.
Journal ArticleDOI
Effect of gas temperature on the structural and optoelectronic properties of a-Si:H thin films deposited by PECVD
TL;DR: In this paper, the effect of gas temperature (T g ) in the process of plasmaenhanced chemical vapor deposition (PECVD) on the structural and optoelectronic properties of the grown a-Si:H thin film has been examined using multiple characterization techniques.
Journal ArticleDOI
Initial growth of intrinsic microcrystalline silicon thin film: Dependence on pre-hydrogen glow discharge and substrate surface morphology
TL;DR: In this paper, the decreases of amorphous incubation volume from Raman spectra and surface roughness from AFM in hydrogenated microcrystalline silicon (μc-Si:H) films deposited with a pre-hydrogen glow discharge were attributed to the increase in the nuclei density as observed by AFM measurements.
Dissertation
Thin film amorphous silicon cells by inductive PECVD, with a view towards flexible substrates
TL;DR: It was concluded that the rear contact topography and defect density is of significant importance when dealing with flexible substrates and that sputtering rather than evaporation would have been a more suitable technique to fabricate it.
Journal ArticleDOI
Research on the Development of Flexible Solar Cells
TL;DR: In this paper, the authors introduce cell structures, fabrication methods and current statuses of four types of flexible solar cells respectively, including the flexible silicon thin film solar cell, the flexible CdTe solar cell and the flexible perovskite solar cell.
References
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Journal ArticleDOI
Complete microcrystalline p-i-n solar cell—Crystalline or amorphous cell behavior?
TL;DR: Voltage‐dependent spectral response measurements suggest that the carrier transport in complete μc‐Si:H p‐i‐n cells may possibly be cosupported by diffusion (in addition to drift), and first light‐soaking experiments indicate no degradation for the entirely μc •Si •H cells.
Journal ArticleDOI
High rate growth of microcrystalline silicon at low temperatures
TL;DR: In this article, a high rate growth method of microcrystalline silicon at low temperatures has been developed using plasma enhanced chemical vapor deposition (PECVD) using a novel control of plasma is demonstrated using a high deposition pressure of 2-4 Torr combined with a depletion condition of source gas (SiH 4 ) at a high RF power (a high-pressure-depletion method) and consequently a growth rate of 1.5 nm/s has been achieved using a conventional radio frequency plasma enhanced chemically vapor deposition at 13.56 MHz.
Journal ArticleDOI
Microcrystalline silicon and micromorph tandem solar cells
TL;DR: In this article, the authors show that the complexity and the variety of microcrystalline silicon can be considered to be much more complex and very different from an ideal isotropic semiconductor and point out that the deposition parameter space is very large and mainly unexploited.
Journal ArticleDOI
Microcrystalline silicon solar cells deposited at high rates
TL;DR: The influence of deposition parameters on the deposition rate and the solar cell performance were comprehensively studied in this paper, as well as the structural, optical, and electrical properties of the resulting solar cells.
Journal ArticleDOI
High-rate deposition of amorphous hydrogenated silicon: effect of plasma excitation frequency
TL;DR: In this article, the effect of plasma excitation frequency on the deposition of amorphous hydrogenated silicon in a silane glow-discharge system is investigated, and a large increase in the deposition rate up to 21 A/s is observed in the range between 25 and 150 MHz.