Journal ArticleDOI
Dynamic avalanche and reliability of high voltage diodes
Josef Lutz,Martin Domeij +1 more
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TLDR
Diode failures are a limiting factor for the reliability of power circuits and one failure reason is dynamic avalanche, Dynamic avalanche can be distinguished in three degrees, and some designs are ruined.About:
This article is published in Microelectronics Reliability.The article was published on 2003-04-01. It has received 48 citations till now. The article focuses on the topics: Avalanche diode & Single-photon avalanche diode.read more
Citations
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Proceedings ArticleDOI
Switching-self-clamping-mode "SSCM", a breakthrough in SOA performance for high voltage IGBTs and diodes
TL;DR: In this paper, the authors present a new high voltage IGBT and diode design platform exhibiting the highest SOA limits achieved to date, with voltage ratings ranging from 3.3kV to 6.5kV capable of withstanding both dynamic avalanche and what they refer to as the Switching Self-Clamping-Mode.
Proceedings ArticleDOI
The field charge extraction (FCE) diode: a novel technology for soft recovery high voltage diodes
Arnost Kopta,Munaf Rahimo +1 more
TL;DR: In this paper, a newly developed high voltage diode technology, exhibiting soft recovery performance under all operating conditions, was presented for the first time, which is capable of providing the necessary charge for soft recovery behavior by employing the field charge extraction (FCE) technology.
Journal ArticleDOI
Analysis of Clamped Inductive Turnoff Failure in Railway Traction IGBT Power Modules Under Overload Conditions
Xavier Perpiñà,Jean-François Serviere,J. Urresti-Ibanez,I. Cortes,X. Jorda,Salvador Hidalgo,Jose Rebollo,Michel Mermet-Guyennet +7 more
TL;DR: Results show that mismatches in the electrothermal properties of the IGBT device during transient operation can lead to uneven power dissipation, significantly enhancing the risk of failure and reducing the lifetime of the power module.
Journal ArticleDOI
The $\hbox{nn}^{+}$ -Junction as the Key to Improved Ruggedness and Soft Recovery of Power Diodes
TL;DR: In this paper, the effects during reverse recovery of pin power diodes are determined by free carriers and their interaction with the electric field, and a density of free carriers higher than the background doping will easily occur in space-charge regions during reverse recover of high-voltage silicon devices.
References
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Journal ArticleDOI
Calculation of avalanche breakdown voltages of silicon p-n junctions
TL;DR: An empirical formula for the ionization coefficient given by α = CEg (C and g constants, E electric field) and which is considered as a common effective value for both holes and electrons yields tractable expressions for the breakdown voltages of abrupt and graded silicon pn junctions.
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Avalanche characteristics and failure mechanism of high voltage diodes
TL;DR: In this article, the avalanche characteristics of PνN junction diodes were analyzed and it was theoretically shown that they have negative resistance regions caused by the space charge effect of the carriers.
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On the destruction limit of Si power diodes during reverse recovery with dynamic avalanche
TL;DR: In this article, an approximate equation is proposed to determine the minimum n-base width required for a non-destructive reverse recovery with dynamic avalanche as a function of the reverse peak voltage.
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Current filamentation in bipolar power devices during dynamic avalanche breakdown
TL;DR: In this paper, a physical model is derived which explains current filamentation to be due to a possible negative differential resistance during dynamic avalanche breakdown, and simulations of reverse recovery of a diode structure at similar operating conditions were carried out.
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Analytical model for the destruction mechanism of GTO-like devices by avalanche injection
TL;DR: In this paper, a unified analytical model is derived from very basic principles, which allows qualitative and quantitative description of all essential features characteristic of critical turn-off of devices based on the gate-turn-off-thyristor (GTO) principle and thus gives insight into the details of the destruction mechanism.