Journal ArticleDOI
Effect of carrier diffusion in oxidized vertical-cavity surface-emitting lasers determined from lateral spontaneous emission
TLDR
In this article, the effect of carrier diffusion on threshold current was studied quantitatively for the oxide-aperturbed 780 nm vertical-cavity surface-emitting lasers (VCSEL) from the measured spontaneous emission.Abstract:
The effect of carrier diffusion on threshold current is studied quantitatively for the oxide-aperturbed 780 nm vertical-cavity surface-emitting lasers (VCSEL) from the measured spontaneous emission. The oxide aperture size of 2–10 μm is prepared and characterized. The diffusion coefficient of 4.6 cm2/s and the nonradiative recombination coefficient of 6.8×107/s are obtained using the independence of the nonradiative recombination coefficient on the laser aperture size. The contribution of carrier diffusion loss is 42% of the threshold current for the 2 μm VCSEL. The relative contribution of the diffusion becomes smaller for the larger devices as is expected.read more
Citations
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Journal ArticleDOI
Intelligent 2-Dimensional Soft Decision Enabled by K-Means Clustering for VCSEL-Based 112-Gbps PAM-4 and PAM-8 Optical Interconnection
TL;DR: The results indicate significant improvement of the proposed k-means 2D SD without training using prior-known sequences, which can be realized by additional consideration of nonlinearity, level-dependent noise and ISI.
Proceedings ArticleDOI
Detection of lateral spontaneous emission for VCSEL monitoring
Charlotte Bringer,Véronique Bardinal,Emmanuelle Daran,Thierry Camps,Yann G. Boucher,Guilhem Almuneau,Olivier Gauthier-Lafaye,P. Dubreuil,Jean-Baptiste Doucet,Chantal Fontaine +9 more
TL;DR: In this article, the authors investigated a simpler solution based on a standard VCSEL array, using in plane optical waveguiding of spontaneous emission in the intrinsic central zone of the devices.
Journal ArticleDOI
Laterally intermixed quantum structure for carrier confinement in vertical-cavity surface-emitting lasers
Y. Sugawara,Tomoyuki Miyamoto +1 more
TL;DR: In this article, a quantum structure intermixing from the lateral direction of the mesa sidewall is proposed as an improvement method of the performance of vertical-cavity surface-emitting lasers (VCSELs).
Journal ArticleDOI
Polarization properties in the transition from below to above lasing threshold in broad-area vertical-cavity surface-emitting lasers
TL;DR: In this paper, the authors show that a rotation of the polarization direction by up to 90 degrees when the pump rate approaches the lasing threshold is possible for broad-area vertical-cavity surface-emitting lasers.
Journal ArticleDOI
Threshold simulation of 1.3-μm oxide-confined in-plane quantum-dot (InGa)As/GaAs lasers
TL;DR: In this article, the selfconsistent optical-electrical-thermal gain model of the oxide-confined long-wavelength 1.3-μm quantum-dot (InGa)As/GaAs diode laser is demonstrated.
References
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Journal ArticleDOI
Determination of nonradiative recombination coefficients of vertical-cavity surface-emitting lasers from lateral spontaneous emission
Jae-Heon Shin,Yong-Hee Lee +1 more
TL;DR: In this article, a simple method to determine nonradiative recombination coefficients of vertical-cavity surface-emitting (VCSEM) lasers is proposed and demonstrated, where the dependence of the lateral spontaneous emission on the current density is used to determine the nonradio-regression coefficients and the threshold carrier densities.
Journal ArticleDOI
Photopumped room‐temperature continuous operation of native‐oxide‐embedded AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum‐well‐heterostructure lasers
TL;DR: In this paper, the authors present data on the 300 K and 77 K continuous photopumped laser operation of AlyGa1−yAs•GaAs•InxGa 1−xAs quantum-well heterostructures (QWHs) that have been oxidized selectively along the highbandgap heterolayers located on either side of a GaAs waveguide (WG) region with an InxGa1 −xAs QW in its center.
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