Journal ArticleDOI
Temperature dependence of laser threshold in an InGaAsN vertical-cavity surface-emitting laser
TLDR
In this article, the temperature dependence of threshold current in an InGaAsN/GaAs vertical-cavity surface-emitting laser (VCSEL) operating at 1.3 μm under continuous-wave current injection was investigated.Abstract:
We present theoretical and experimental results for the temperature dependence of threshold current in an InGaAsN/GaAs vertical-cavity surface-emitting laser (VCSEL) operating at 1.3 μm under continuous-wave current injection. Using a microscopic many-body laser theory, good agreement with experimental data is obtained. The influence of radiative and nonradiative recombination processes on the threshold current–density is investigated theoretically. Also, comparison to a GaAs/AlGaAs VCSEL emitting at 850 nm is made.read more
Citations
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Journal ArticleDOI
Microscopic theory of gain and spontaneous emission in GaInNAs laser material
TL;DR: In this article, a fully microscopic model is used to calculate absorption/gain and spontaneous emission for GaInNAs quantum-well laser gain media, which can be used to derive the optical properties for the regime of semiconductor laser operation from low density photo luminescence spectra.
Journal ArticleDOI
Optical properties of GaNAs and GaInAsN quantum wells
TL;DR: In this article, a simple model for calculating interband transition energies is constructed, tested against published results and used to model experimental data, and the effects of carrier localization, hot-carrier relaxation, non-radiative recombination and the reduced bandgap temperature dependence of dilute nitrides are investigated.
Journal ArticleDOI
Emission dynamics and optical gain of 1.3-/spl mu/m (GaIn)(NAs)/GaAs lasers
Martin R. Hofmann,Nils C. Gerhardt,A. Wagner,C. Ellmers,F. Höhnsdorf,J. Koch,Wolfgang Stolz,S. W. Koch,W. W. Rühle,Jörg Hader,Jerry V. Moloney,Eoin P. O'Reilly,B. Borchert,A.Y. Egorov,Henning Riechert,Hans Christian Schneider,W.W. Chow +16 more
TL;DR: In this article, a femtosecond upconversion of a 1.3-/spl mu/m (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser is studied by femto-cond luminescence upcon conversion.
Journal ArticleDOI
Temperature Analysis of Threshold Current in Infrared Vertical-Cavity Surface-Emitting Lasers
TL;DR: In this article, the authors compare the temperature dependence of threshold current in VCSELs with GaAs, InGaAs, and strain compensated InGaAS-GaAsP quantum wells and find that the coefficient beta is related to the gain properties of the quantum well.
Journal ArticleDOI
Spinodal decomposition range of InxGa1−xNyAs1−y alloys
TL;DR: In this paper, the spinodal decomposition range of InxGa1−xNyAs1−y quaternary alloys as the result of the strain and coherency strain energies, transformations of the bonds, and a lattice mismatch between the GaAs substrate and an alloy is described.
References
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Journal ArticleDOI
GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
TL;DR: In this paper, a novel material, GaInNAs, that can be formed on GaAs to drastically improve the temperature characteristics in long-wavelength-range laser diodes is proposed.
Journal ArticleDOI
1.3 μm room-temperature GaAs-based quantum-dot laser
TL;DR: In this article, the ground state of an InGaAs/GaAs quantum-dot ensemble was obtained at 1.31 μm with a threshold current density of 270 A/cm2 using high-reflectivity facet coatings.
Journal ArticleDOI
InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
TL;DR: In this paper, the design, growth by metal-organic chemical vapor deposition, and processing of an In{sub 0.07}Ga, sub 0.93}As, sub 1.0 ev bandgap, lattice matched to GaAs was described, and hole diffusion length in annealed, n-type InGaAsN is 0.6-0.8 pm.
Journal ArticleDOI
Room temperature continuous wave InGaAsN quantum well vertical cavity lasers emitting at 1.3 um
Kent D. Choquette,John F. Klem,Arthur J. Fischer,O. Blum,A. A. Allerman,I. J. Fritz,Steven R. Kurtz,William G. Breiland,R. M. Sieg,Kent M. Geib,J.W. Scott,R.L. Naone +11 more
TL;DR: In this article, the authors used two n-type As/GaAs distributed Bragg reflectors with a selectively oxidized current aperture adjacent to the optical cavity, and the top output mirror contains a tunnel junction to inject holes into the active region.