Journal ArticleDOI
Effect of carrier diffusion in oxidized vertical-cavity surface-emitting lasers determined from lateral spontaneous emission
TLDR
In this article, the effect of carrier diffusion on threshold current was studied quantitatively for the oxide-aperturbed 780 nm vertical-cavity surface-emitting lasers (VCSEL) from the measured spontaneous emission.Abstract:
The effect of carrier diffusion on threshold current is studied quantitatively for the oxide-aperturbed 780 nm vertical-cavity surface-emitting lasers (VCSEL) from the measured spontaneous emission. The oxide aperture size of 2–10 μm is prepared and characterized. The diffusion coefficient of 4.6 cm2/s and the nonradiative recombination coefficient of 6.8×107/s are obtained using the independence of the nonradiative recombination coefficient on the laser aperture size. The contribution of carrier diffusion loss is 42% of the threshold current for the 2 μm VCSEL. The relative contribution of the diffusion becomes smaller for the larger devices as is expected.read more
Citations
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Journal ArticleDOI
Very small oxide-confined vertical microcavity lasers with high-contrast AlGaAs-Al/sub x/O y mirrors
TL;DR: In this paper, photo-pumped lasing action from a very small oxide-confined 870-nm vertical microcavity laser with high contrast AlGaAs-Al/sub x/O/sub y/ mirrors was reported.
Journal ArticleDOI
Nearly degenerate four-wave mixing in laser diodes subject to strong probe injection power
Jianming Tang,K.A. Shore +1 more
TL;DR: In this article, the effects of pump depletion, carrier diffusion, gain saturation, gain compression, total power dependence of the gain and coupling coefficients as well as the longitudinal dependence of nonlinear interaction were investigated for nearly degenerate four-wave mixing in above-threshold laser diodes with symmetric or asymmetric facet reflectivities.
Journal ArticleDOI
Edge spontaneous emission from 850 nm vertical-cavity surface emitting lasers
TL;DR: In this paper, the edge emission from 850nm vertical-cavity surface emitting lasers has a much larger linewidth and a larger redshift coefficient than the surface emission, which explains why the threshold current increased asymmetrically when temperature deviated from the temperature associated with the lowest threshold current.
Journal ArticleDOI
Analysis of nearly degenerate four-wave mixing in multisection laser diodes
J.M. Tang,K.A. Shore +1 more
TL;DR: In this article, the characteristics of nearly degenerate four-wave mixing (NDFWM) in above-threshold two-section single cavity Fabry-Perot (TSSC FP) laser diodes subject to weak or strong probe-injection power, are investigated numerically.
Proceedings ArticleDOI
Static and dynamic effects of lateral carrier diffusion in semiconductor lasers
TL;DR: In this paper, the authors applied a hydrodynamic model developed by the present authors recently from the semiconductor Bloch equations to calculate the lateral carrier diffusion coefficient, which is a nonlinear function of the carrier density and plasma temperature.
References
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Book
Quantum well lasers
TL;DR: In this article, the origin of Quantum Wells and the Quantum Well Laser is discussed and the effect of intrinsic relaxation on optical spectra is discussed, as well as the properties of Quantum Well Lasers.
Journal ArticleDOI
Ultralow threshold current vertical-cavity surface-emitting lasers obtained with selective oxidation
TL;DR: In this paper, the InGaAs single quantum well vertical-cavity surface-emitting laser with an intracavity p-contact fabricated by selective oxidation of AlAs and distributed Bragg reflectors composed of binary materials (AlAs/GaAs).
Journal ArticleDOI
Record low-threshold index-guided InGaAs/GaAlAs vertical-cavity surface-emitting laser with a native oxide confinement structure
Yusuke Hayashi,T. Mukaihara,Nobuaki Hatori,N. Ohnoki,Akihiro Matsutani,Fumio Koyama,Kenichi Iga +6 more
TL;DR: In this article, an index-guided InGaAs/GaAlAs vertical-cavity surface-emitting laser with a native oxide confinement structure has been proposed and fabricated.
Journal ArticleDOI
Low threshold half-wave vertical-cavity lasers
TL;DR: In this paper, the authors characterized half-wavelength vertical-cavity surface-emitting laser defined by a nativeoxide ring in which the native oxide is 200 A from the single quantum well.
Journal ArticleDOI
Fabrication and performance of selectively oxidized vertical-cavity lasers
Kent D. Choquette,Kevin L. Lear,Richard P. Schneider,Kent M. Geib,Jeffrey J. Figiel,Robert Hull +5 more
TL;DR: In this article, the authors report the high yield fabrication and reproducible performance of selectively oxidized vertical-cavity surface emitting lasers. Butler et al. showed that linear oxidation rates of AlGaAs without an induction period allows reproducible fabrication of buried oxide current apertures within monolithic distributed Bragg reflectors.
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