Journal ArticleDOI
Effect of Nitrogen‐Induced Modification of the Conduction Band Structure on Electron Transport in GaAsN Alloys
Czeslaw Skierbiszewski,Piotr Perlin,Przemyslaw Wisniewski,Tadeusz Suski,Wladek Walukiewicz,W. Shan,Joel W. Ager,Eugene E. Haller,John F. Geisz,Daniel J. Friedman,J. M. Olson,Sarah Kurtz +11 more
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In this paper, pressure studies of conductivity, photoconductivity and Hall effect in Si-doped GaAs0.986N0.014 were conducted and it was observed that pressure causes an unusually large reduction of the electron mobility in this compound (factor of 2.5 in the pressure range 0 to 2 GPa).Abstract:
We report pressure studies of conductivity, photoconductivity and Hall effect in Si doped GaAs0.986N0.014. We observed that pressure causes an unusually large reduction of the electron mobility in this compound (factor of 2.5 in the pressure range 0 to 2 GPa). We also measured the pressure coefficient of the energy gap and we found it, in agreement with previous reports, to be reduced by almost 40% compared to that of GaAs. These results can be successfully explained by a recently proposed, phenomenological model based on the concept of an anticrossing interaction between localized N-related states (resonant with the conduction band) and conduction band states. This model explains well the reduction of the pressure coefficient of the bandgap and predicts an enhancement of the effective mass of GaAs1—xNx. The decrease of electron mobility observed in the present study is in agreement with this latter prediction.read more
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III-N-V semiconductors for solar photovoltaic applications
J. F. Geisz,Daniel J. Friedman +1 more
TL;DR: In this paper, the main roadblock to the development of these solar cell devices is poor minority-carrier transport in the III-N-V materials, and the present understanding of the material properties of GaInNAs lattice matched to GaAs and GaNPAs matched to Si is reviewed.
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Electronic Properties of Ga(In)NAs Alloys
TL;DR: A brief review on the present knowledge of the electronic properties of the Ga(In)NAs ternary and quaternary alloys is given mainly from an experimental perspective in this article.
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Direct determination of electron effective mass in GaNAs/GaAs quantum wells
TL;DR: In this article, the authors investigated the effective mass (m*e) in GaNxAs1-x/GaAs quantum wells (QWs) by the optically detected cyclotron resonance technique.
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Minority carrier diffusion, defects, and localization in InGaAsN with 2% nitrogen
TL;DR: In this article, electron and hole transport in compensated, InGaAsN ({approx} 2% N) was examined through Hall mobility, photoconductivity, and solar cell photoresponse measurements.
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Minority carrier diffusion and defects in InGaAsN grown by molecular beam epitaxy
TL;DR: In this paper, the nitrogen-related defects of InGaAsN, nitrogen vibrational mode spectra, Hall mobilities, and minority carrier diffusion length were examined for solar cells grown by molecular beam epitaxy.