Journal ArticleDOI
Effective two-level-model with asymmetric gain for laser diodes
TLDR
An extension of the two-level model which features asymmetric gain is introduced for semiconductor laser diodes in this article, which includes an evolution equation for the material polarization in semiconductor media obtained from the calculation of the electrical susceptibility.About:
This article is published in Optics Communications.The article was published on 1995-08-15. It has received 34 citations till now. The article focuses on the topics: Round-trip gain & Gain.read more
Citations
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Journal ArticleDOI
Laser instabilities: a modern perspective
Journal ArticleDOI
Effective Bloch equations for semiconductor lasers and amplifiers
TL;DR: In this paper, a set of effective Bloch equations is established for semiconductor bulk or quantum-well media, including the nonlinear carrier-density dependence of the gain and refractive index and their respective dispersions.
Journal ArticleDOI
Cavity solitons in a driven VCSEL above threshold
X. Hachair,Francesco Pedaci,E. Caboche,Stephane Barland,Massimo Giudici,Jorge R. Tredicce,Franco Prati,Giovanna Tissoni,Reza Kheradmand,Luigi A. Lugiato,Igor E. Protsenko,Massimo Brambilla +11 more
TL;DR: In this paper, the authors demonstrate the existence and control of cavity solitons in externally driven vertical-cavity semiconductor lasers above a threshold using a model including material polarization dynamics.
Journal ArticleDOI
Mode-Locking in Semiconductor Fabry-Pérot Lasers
Julien Javaloyes,Salvador Balle +1 more
TL;DR: In this paper, the authors theoretically study the dynamics and the mode-locking properties of semiconductor Fabry-Perot lasers with intracavity saturable absorber by using a travelling-wave model and a time-domain description of the optical response of the semiconductor materials.
Journal ArticleDOI
Spatio-temporal modeling of the optical properties of VCSELs in the presence of polarization effects
Josep Mulet,Salvador Balle +1 more
TL;DR: In this article, an optical dynamical model for vertical-cavity surface-emitting lasers (VCSELs) was developed, which describes, in an unified way, polarization and spatial effects.
References
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Long-wavelength semiconductor lasers
TL;DR: In this paper, the current status and future applications of lightwave transmission of longwavelength semiconductor lasers emitting near 1.3 and 1.55-mu m are described, and bit-error-rate curves for a transmission experiment at 8 Gb/s over 76 km of fiber are shown.
Journal ArticleDOI
Effective Bloch equations for semiconductors
M. Lindberg,Stephan W. Koch +1 more
TL;DR: A generalization of the Elliott formula for the absorption spectrum is derived which is valid not only for bulk semiconductors, but also for quantum-well structures and other systems with reduced spatial dimensions.
Journal ArticleDOI
Spectral Output and Spiking Behavior of Solid‐State Lasers
C. L. Tang,H. Statz,G. deMars +2 more
TL;DR: In this article, it was shown that the spatial variation in the field intensity of the various modes produces non-uniform distributions in the inverted population and one can show that there is little tendency for these distributions to smooth out due to spatial cross relaxation.
Journal ArticleDOI
Calculated spectral dependence of gain in excited GaAs
TL;DR: In this article, the calculated dependence of the gain coefficient on photon energy and excitation level in GaAs is given for 297 and 77 K. The qualitative behavior of the results is in agreement with experiment.
Journal ArticleDOI
Semiconductor laser theory with many-body effects.
Hartmut Haug,Stephan W. Koch +1 more
TL;DR: A description of the electron-hole plasma of a semiconductor laser is developed that includes the many-body effects due to the Coulomb interactions and the present semiclassical theory is completed by the laser field equations and by the addition of Langevin fluctuations.
Related Papers (5)
Maxwell-Bloch equations for spatially inhomogeneous semiconductor lasers. I. Theoretical formulation.
Ortwin Hess,Tilmann Kuhn +1 more