Effects of self-heating on planar heterostructure barrier varactor diodes
Jan Stake,Lars Dillner,S.H. Jones,Chris M. Mann,J. Thornton,J. R. Jones,W.L. Bishop,Erik L. Kollberg +7 more
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In this paper, a planar Al/sub 0.7/GaAs-GaAs heterostructure barrier varactor triplers were reduced from a theoretical efficiency of 10% to 3% due to self-heating.Abstract:
The conversion efficiency for planar Al/sub 0.7/GaAs-GaAs heterostructure barrier varactor triplers is shown to be reduced from a theoretical efficiency of 10% to 3% due to self-heating. The reduction is in accordance with measurements on planar Al/sub 0.7/GaAs-GaAs heterostructure barrier varactor (HBV) triplers to 261 GHz at room temperature and with low temperature tripler measurements to 255 GHz. The delivered maximum output power at 261 GHz is 2.0 mW. Future HBV designs should carefully consider and reduce the device thermal resistance and parasitic series resistance. Optimization of the RF circuit for a 10 /spl mu/m diameter device yielded a delivered output power of 3.6 mW (2.5% conversion efficiency) at 234 GHz.read more
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Journal ArticleDOI
Heterostructure-barrier-varactor design
TL;DR: In this article, a set of accurate frequency-domain design equations for calculation of optimum embedding impedances, optimum input power, bandwidth, and conversion efficiency of heterostructure-barrier-varactor (HBV) frequency triplers were proposed.
Journal ArticleDOI
Fabrication and performance of InP-based heterostructure barrier varactors in a 250-GHz waveguide tripler
X. Melique,Alain Maestrini,R. Farre,Patrick Mounaix,M. Favreau,Olivier Vanbésien,J.M. Goutoule,F. Mollot,G. Beaudin,Tapani Narhi,Didier Lippens +10 more
TL;DR: The InGaAs-InAlAs-AlAs heterostructure barrier varactors (HBV's) have been designed, fabricated, and RF tested in a 250 GHz tripler block.
Journal ArticleDOI
Electro-Thermal Model for Multi-Anode Schottky Diode Multipliers
Aik-Yean Tang,Erich Schlecht,Robert Lin,Goutam Chattopadhyay,Choonsup Lee,John Gill,Imran Mehdi,Jan Stake +7 more
TL;DR: In this paper, a self-consistent electro-thermal model for multi-anode Schottky diode multiplier circuits is presented, where the nonlinear temperature responses of the material are taken into consideration by using a linear temperature-dependent approximation for the thermal resistance.
Journal ArticleDOI
A 0.2-W Heterostructure Barrier Varactor Frequency Tripler at 113 GHz
TL;DR: In this article, a high-power InAlAs/InGaAs/INP heterostructure barrier varactor (HBV) frequency tripler was proposed for high power frequency triplers.
Journal ArticleDOI
A distributed heterostructure barrier varactor frequency tripler
TL;DR: In this article, a broadband nonlinear transmission line (NLTL) frequency multiplier at F-band is presented, which consists of a finline section periodically loaded with 15 heterostructure barrier varactor (HBV) diodes.
References
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Book
Nonlinear microwave circuits
TL;DR: This classic text is an excellent resource and time-saver for engineers who need to tackle troublesome nonlinear components that remain in use despite recent advances in microwave technology.
Journal ArticleDOI
Temperature Dependence of the Transport Properties of Gallium Arsenide Determined by a Monte Carlo Method
J. G. Ruch,W. Fawcett +1 more
TL;DR: In this paper, the transport properties of gallium arsenide in an electric field have been calculated in the temperature range 77°-500°K using a Monte Carlo technique, and it is found that the threshold field for the onset of negative differential mobility changes only slightly over this temperature range increasing from 3.1 kV/cm at 77°K to 3.7kV/ cm at 500°K, while the negative differential movement reduces from 4200 to 1000 cm2/V sec over the same temperature rise.
Journal ArticleDOI
Quantum-Barrier-Varactor Diodes for High-Efficiency Millimetre-Wave Multipliers
Erik L. Kollberg,Anders Rydberg +1 more
TL;DR: In this article, the quantum-barrier-varactor diode (QBV diode) was proposed for use in multipliers for millimetre waves, where the capacitance/voltage characteristic is symmetric and only odd harmonics are obtained.
Journal ArticleDOI
Current saturation in submillimeter-wave varactors
TL;DR: In this paper, the authors discuss the phenomenon of saturation of the varactor output power and show that it severely degrades the multiplier performance at higher frequencies, where the RF current through the active part is primarily displacement current.
Proceedings ArticleDOI
A Novel Whiskerless Schottky Diode for Millimeter and Submillimeter Wave Application
TL;DR: In this article, a novel whiskerless Schottky diode was developed in which shunt capacitance is minimized by means of an etched surface channel, which can be easily fabricated and the DC I-V characteristics are good as those of the best available whisker-contacted devices.
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