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Journal ArticleDOI

Electrical conductivity, optical absorption and structural studies in thin films

C M Joseph, +1 more
- 01 Nov 1996 - 
- Vol. 11, Iss: 11, pp 1668-1671
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TLDR
In this paper, the activation energy of thin polycrystalline polysilicon films was investigated for different substrate and post-deposition annealing temperatures, ranging from 76 meV to 330 meV for the impurity scattering region and around 700 meV in the intrinsic region.
Abstract
Electrical, optical and structural properties of thin films deposited on glass substrates are studied for different substrate and post-deposition annealing temperatures. The substrate temperature is varied in the range 300 - 773 K. The activation energy has been calculated for the films using the Arrhenius plot and the bandgap has been obtained from the optical transmission spectra. The activation energy varied from 76 meV to 330 meV for in the impurity scattering region and for the value is around 700 meV in the intrinsic region. Optical absorption spectra show variation in the bandgap, varying from 1.18 to 1.42 eV as the substrate temperature varied from 300 - 773 K. Films deposited at higher substrate temperatures give a = 5.93 A and c = 11.22 A for the tetragonal phase. The mean grain size of the films is for polycrystalline films.

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One-Pot Synthesis of New-Phase AgInSe2 Nanorods

TL;DR: A systematic study indicates that the ratio of surfactants is crucial for obtaining both monodispersed nanorods and the new orthorhombic phase AgInSe2.
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Optical Study on Poly(methyl methacrylate)/Poly(vinyl acetate) Blends

TL;DR: In this article, transparent films of poly(methyl methacrylate)/poly(vinyl acetate) blend with different concentrations were prepared by using solution-cast technique and optical absorption measurements were carried out for the samples at room temperature across the 190-900nm wavelength regions before and after exposure to UV and filtered radiation using xenon arc lamp.
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Synthesis and characterization of AIS chalcopyrite thin films for solar cell applications

TL;DR: In this article, a high-stiochiometric AgInSe 2 thin film was prepared on p-type Si (111) substrate via sol-gel spin coating technique, and X-ray diffraction spectrum depicted that the crystal structure of AgInSE 2 film was chalcopyrite with lattice constants a ǫ = 6.102 A and c à à = 11.69 A.
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Laser dyes doped with poly(ST-Co-MMA) as fluorescent solar collectors and their field performance

TL;DR: In this article, the photo-stability of the dye/copolymer samples has been studied and all the used dyes were found to be more photo-stable doped in copolymer matrix than in PMMA matrix.
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Fabrication of Novel CdIn2S4 Hollow Spheres via a Facile Hydrothermal Process

TL;DR: In this paper, a facile hydrothermal process was used to synthesize CdIn2S4 hollow spheres with small bipyramids aggregating on their surface without any template or surfactant.
References
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Thin film phenomena

Journal ArticleDOI

Transport properties of polycrystalline silicon films

TL;DR: In this article, the transport properties of polycrystalline silicon films are examined and interpreted in terms of a modified grain-boundary trapping model, based on the assumption of both a δ-shaped and a uniform energy distribution of interface states.
Journal ArticleDOI

High-efficiency cuinxga1-xse2 solar cells made from (inx,ga1-x)2se3 precursor films

TL;DR: In this paper, Ga and Se were coevaporated to form precursor films of (Inx,Ga1−x)2Se3, which were then converted to CuInxGa 1−xSe2 by exposure to a flux of Cu and Se. The final films were smooth, with tightly packed grains, and had a graded Ga content as a function of film depth.
Journal ArticleDOI

CuInSe2/CdS heterojunction photovoltaic detectors

TL;DR: In this article, the authors report CuInSe2/CdS p−n heterojunction photovoltaic detectors which display uniform quantum efficiencies of up to ∼70% between 0.55 and 1.25 μ.
Journal ArticleDOI

Efficient CuInSe2/CdS solar cells

TL;DR: In this article, the authors reported the preparation of a CuInSe2/CdS heterojunction solar cell having a solar power conversion efficiency of 12% measured on a clear day in New Jersey (∼92mW/cm2 solar intensity).
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