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Electrical properties of β‐FeSi2/Si heterojunctions
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In this paper, the electrical properties of polycrystalline films of β-FeSi2 grown on n-type single-crystal silicon are investigated, showing that multistep tunneling is the current conduction mechanism due to a high density of interface defects.Abstract:
The electrical properties of heterojunctions of polycrystalline films of β‐FeSi2 grown on n‐type single‐crystal silicon are investigated. The dark current‐voltage and capacitance‐voltage characteristics are measured over a wide temperature range. Analysis of the data reveal that multistep tunneling is the current conduction mechanism due to a high density of interface defects.read more
Citations
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Journal ArticleDOI
The Hall effect in β‐FeSi2 single crystals
TL;DR: The magnetic field dependence of the Hall coefficient in n-type β-FeSi2 was observed in the temperature range of 30-300 K and explained in the limits of a two-band model as discussed by the authors.
Journal ArticleDOI
Preparation and Properties of High‐Purity β‐FeSi2 Single Crystals
TL;DR: In this article, the p-type conductivity of undoped single crystals reported in literature results from non-intentional doping by the high impurity level of the source material used, indicating that the single crystal properties were significantly influenced by intrinsic defects caused by deviations from the strictly stoichiometric composition and not by extrinsic factors.
Journal ArticleDOI
Fabrication and electrical characterization of p-Sb2S3/n-Si heterojunctions for solar cells application
TL;DR: In this article, the electrical transport properties of the p-Sb2S3/n-Si heterojunctions were investigated by current-voltage (I-V) and capacitance voltage (C−V) measurements.
Journal ArticleDOI
Doping of β-FeSi2 films with boron and arsenic by sputtering and its application for optoelectronic devices
Zhengxin Liu,Masato Osamura,Teruhisa Ootsuka,Shinan Wang,Yasuhiro Fukuzawa,Yasuhito Suzuki,Ryo Kuroda,Takahiro Mise,Naotaka Otogawa,Yasuhiko Nakayama,Hisao Tanoue,Yunosuke Makita +11 more
TL;DR: In this paper, impurity-doped β-FeSi 2 thin films with boron as p-type and arsenic as n-type dopants were fabricated by sputtering method.
Journal ArticleDOI
Band discontinuities at beta -FeSi2/Si heterojunctions as deduced from their photoelectric and electrical properties
TL;DR: In this paper, experimental photoresponses and electrical properties of metal/ beta-FeSi2/Si structures are presented. And the authors compare three kinds of samples: two with a thin epitaxial silicide layer (180 AA), prepared by two different methods, and one with a thick polycrystalline silicide layers (2500 AA).
References
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Journal ArticleDOI
Some structural, electrical and optical investigations on a new amorphous material: FeSi2
TL;DR: In this paper, the electrical behavior of amorphous layers is more similar to that of the metallic high-temperature phase (α-FeSi2) than to the semiconducting one (β- FeSi2), and the observed properties of the ammorphous and crystalline layers are interpreted in terms of a crude band model.
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Epitaxial growth of FeSi2 in Fe thin films on Si with a thin interposing Ni layer
TL;DR: In this paper, the formation of a transition layer with graded concentration is conceived to facilitate the epitaxial growth of FeSi2 on silicon, and the thin interposing layer scheme may be extended to promote the growth of refractory silicides on silicon.