Journal ArticleDOI
Electronic properties of semiconducting FeSi2 films
Charalabos A. Dimitriadis,Jürgen H. Werner,Stergios Logothetidis,Martin Stutzmann,J. Weber,R. Nesper +5 more
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TLDR
In this article, X-ray diffraction indicates that orthorhombic β-FeSi2 is obtained for growth temperatures in the range 800 −900 ǫ°C, and photothermal deflection spectroscopy reveals a direct band gap of 0.85 eV.Abstract:
Polycrystalline iron disilicide thin films are prepared by furnace annealing of electron‐beam deposited iron layers. As substrates we use single‐crystal silicon wafers, epitaxial silicon thin films on sapphire substrates, and low‐pressure chemical vapor deposited polycrystalline silicon thin films on oxidized silicon wafers. X‐ray diffraction indicates that orthorhombic β‐FeSi2 is obtained for growth temperatures in the range 800–900 °C. Photothermal deflection spectroscopy reveals a direct band‐gap of 0.85 eV. Optical transitions at energies above 1.4 eV are investigated by spectroscopic ellipsometry. Measurements of the subgap defect absorption, photoluminescence, conductivity, and of the Hall mobility suggest that lower growth temperatures yield material of better quality.read more
Citations
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Journal ArticleDOI
A silicon/iron-disilicide light-emitting diode operating at a wavelength of 1.5 μm
TL;DR: In this article, a light-emitting device operating at 1.5 µm was presented that incorporates β-FeSi2 into a conventional silicon bipolar junction, which demonstrates the potential of this material as an important candidate for a silicon-based optoelectronic technology.
Journal ArticleDOI
Optical absorption study of ion beam synthesized polycrystalline semiconducting FeSi2
TL;DR: In this paper, the existence of a minimum direct band gap was demonstrated and its variation with the temperature was studied by means of a three-parameter thermodynamic model and the Einstein model.
Journal ArticleDOI
Transition metal silicides in silicon technology
TL;DR: In this article, a review of the most recent studies in this field of research is presented, focusing on specific processes involving laterally confined (self-aligned) silicide film formation as more advanced applications require film formation only in certain localized regions on a Si wafer.
Journal ArticleDOI
Semiconducting silicide-silicon heterostructures : growth, properties and applications
TL;DR: In this paper, the structure and physical properties of thin films of some epitaxial semiconducting silicides, β-FeSi 2, ReSi 2 and CrSi 2, are reviewed in the light of results obtained with a large variety of in situ and ex situ surface techniques.
Journal ArticleDOI
Far from equilibrium phase transition induced by solid-state reaction in the FeSi system
TL;DR: In this article, the authors report on the far from equilibrium phase transitions induced by mechanical alloying and post-milling isothermal annealing in the FeSi system.
References
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Book
Optical Processes in Semiconductors
TL;DR: Optical processes in semiconductors as mentioned in this paper, Optical Process in Semiconductors (OPP), Optical Process of Semiconductor (OPS) and Optical Process (OPI)
Book
Silicides for VLSI applications
TL;DR: This paper presents a meta-analysis of the physical properties of the Higgs boson gas molecule and its application in integrated circuit fabrication.
Journal ArticleDOI
Photothermal deflection spectroscopy and detection
TL;DR: The theory for a sensitive spectroscopy based on the photothermal deflection of a laser beam is developed and its implications for imaging and microscopy are given, and the sources of noise are analyzed.