Journal ArticleDOI
Electrical properties of β‐FeSi2/Si heterojunctions
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In this paper, the electrical properties of polycrystalline films of β-FeSi2 grown on n-type single-crystal silicon are investigated, showing that multistep tunneling is the current conduction mechanism due to a high density of interface defects.Abstract:
The electrical properties of heterojunctions of polycrystalline films of β‐FeSi2 grown on n‐type single‐crystal silicon are investigated. The dark current‐voltage and capacitance‐voltage characteristics are measured over a wide temperature range. Analysis of the data reveal that multistep tunneling is the current conduction mechanism due to a high density of interface defects.read more
Citations
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Effects of emitter parameters and recombination mechanisms on the performance of β-FeSi2/c-Si heterojunction solar cells
TL;DR: In this paper, numerical simulations on the performance of p-type β-FeSi 2 emitter/n-type crystalline Si base heterojunction solar cells are carried out using PC1D software.
Journal ArticleDOI
Solution growth of n-type β-FeSi2 single crystals using Sn solvent
TL;DR: In this paper, the authors have grown n-type β-FeSi 2 single crystals by a temperature gradient solution growth method using Sn solvent and found that the typical size of crystals was (3-5) × 0.5× 0.3 mm 3 for a growth period of 336h.
Journal ArticleDOI
Conduction mechanism analysis in β-FeSi2/n-Si heterojunction through J–V–T measurement
TL;DR: In this article, the p-type iron disilicide (β-FeSi2) semiconductor was formed at room temperature without heat treatment due to the superiority of the employed unbalanced magnetron sputtering technique on n-type crystalline silicon (n-Si).
Journal ArticleDOI
Deep levels in β-FeSi2/n-Si heterojunctions
TL;DR: In this paper, deep levels in β-FeSi 2 /n-Si heterojunctions were investigated by deep level transient spectroscopy (DLTS) measurements, revealing the presence of defect states in the Si layer, located close to the interface.
Journal ArticleDOI
Growth conditions of β-FeSi2 single crystals by chemical vapor transport
TL;DR: In this article, the chemical vapor transport (CVT) with iodine as a transport agent was used to grow the β-iron disilicide (FeSi 2 ) single crystals in the present study.
References
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Journal ArticleDOI
Thin Films—Interdiffusion and Reactions
Journal ArticleDOI
Experiments on Ge-GaAs heterojunctions
TL;DR: In this article, the electrical characteristics of Ge-GaAs heterojunctions, made by depositing Ge epitaxially on GaAs substrates, are described and I-V and electro-optical characteristics are consistent with a model in which the conduction-and valence-band edges at the interface are discontinuous.
Journal ArticleDOI
Optical properties of semiconducting iron disilicide thin films
M. C. Bost,John E. Mahan +1 more
TL;DR: In this article, X-ray diffraction indicates the films are single-phase, orthorhombic, β-FeSi2, and single-crystal silicon wafers and with low pressure chemical vapor deposition (LPCVD) polycrystalline silicon thin films.
Journal ArticleDOI
Electrical Transport in nGe-pGaAs Heterojunctions†
A. R. Riben,D. L. Feucht +1 more
TL;DR: In this paper, a multi-step recombination-tunnelling model, similar to that used to describe the excess current in tunnel diodes, is developed to explain the observed electrical characteristics of nGe-pGaAs heterodes.
Journal ArticleDOI
Mechanism of Electrical Conduction in β-FeSi2
U. Birkholz,J. Schelm +1 more
TL;DR: In this article, the authors measured the Hall coefficient of β-FeSi2 doped with cobalt (n-type) or aluminium (p-type), and found that the activation energy of the mobility is 0.06 eV, the density of states N = 1.2 × 1022 cm−3.