Journal ArticleDOI
Electrical properties of boron‐doped hydrogenated amorphous silicon and n‐type GaAs heterojunction
TLDR
In this paper, the electrical properties of (p)aSi:H•(n)GaAs heterojunction were investigated by measuring currentvoltage and capacitance-voltage characteristics.Abstract:
Electrical properties of (p)aSi:H‐(n)GaAs heterojunction were investigated by measuring current‐voltage and capacitance‐voltage characteristics. The experimental results are interpreted in accordance with a generalized a‐c junction model. The built‐in potential of the heterojunction and the gap‐state density in the chemical vapor deposition (p)aSi:H were obtained from the capacitance‐voltage characteristics.read more
References
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Journal ArticleDOI
n-n Semiconductor heterojunctions
William G. Oldham,A.G. Milnes +1 more
TL;DR: In this paper, an ideal model for junction grading during fabrication was developed for n-n heterojunction rectification and an abruptness requirement for rectification to exist was developed on the basis of this ideal model.
Journal ArticleDOI
Electrical properties of n-amorphous/p-crystalline silicon heterojunctions
TL;DR: In this paper, the forward current of all the junctions studied shows voltage and temperature dependence expressed as exp(−ΔEa f/kT) exp(AV), where ΔEa is the diffusion voltage and A is a constant.
Journal ArticleDOI
Amorphous Si/Polycrystalline Si Stacked Solar Cell Having More Than 12% Conversion Efficiency
TL;DR: In this article, a new type of amorphous silicon (a-Si) solar cell stacked with polycrystalline silicon (poly-c-Si), has been developed, and the conversion efficiency more than 12% has been obtained with a cell structure of ITO/n-i-p a-Si/p poly c-Si//Al.
Journal ArticleDOI
A novel method for determining the gap‐state profile and its application to amorphous Si1−xGex: H films
TL;DR: In this article, a novel technique has been proposed for determining the density-of-state (DOS) distribution in the energy gap of highly resistive amorphous semiconductors.
Journal ArticleDOI
Hydrogenated amorphous-silicon/crystalline-silicon heterojunctions: properties and applications
TL;DR: In this paper, the capacitance-voltage and currentvoltage characteristics of amorphous-silicon/crystalline silicon heterojunctions are studied through their capacitance and current-voltages.