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Journal ArticleDOI

Electrical properties of grain-oriented ferroelectric ceramics in some lanthanum modified layer-structure oxides

Tadashi Takenaka, +1 more
- 01 Oct 1981 - 
- Vol. 38, Iss: 1, pp 769-772
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TLDR
In this paper, the effects of grain orientation and La-modification on piezoelectric properties in hot-forged ferroelectric ceramics of some bismuth layer structure oxides were studied, comparing them with ordinarily fired (O.F.) ones.
Abstract
The effects of grain orientation and La-modification on piezoelectric properties in hot-forged (H.F.) ferroelectric ceramics of some bismuth layer structure oxides were studied, comparing them with ordinarily fired (O.F.) ones. La-modified and/or grain-oriented (H.F.) ceramics have the larger electromechanical coupling factor than non-modified and/or O.F. ones.

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Citations
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Journal ArticleDOI

Lanthanum-substituted bismuth titanate for use in non-volatile memories

TL;DR: In this paper, the authors show that lanthanum-substituted bismuth titanate (SBT) thin films provide a promising alternative for FRAM applications, since they are fatigue-free on metal electrodes, they can be deposited at temperatures of ∼650°C and their values of Pr are larger than those of the SBT films.
Journal ArticleDOI

Lead Free Piezoelectric Materials

TL;DR: In this paper, the authors review and discuss piezoelectric properties of selected lead free compositions in relation to structural and microstructural features as well as extrinsic contributions (domain walls displacement, conductivity) to their electromechanical properties.
Journal ArticleDOI

Niobium Doping and Dielectric Anomalies in Bismuth Titanate

TL;DR: In this paper, a study of the complex permittivity in bismuth titanate was conducted to reveal the nature of an anomaly in the real part of the permittivities, which occurs below the Curie temperature.
Journal ArticleDOI

Studies on ferroelectric perovskites and Bi‐layered compounds using micro‐Raman spectroscopy

TL;DR: In this paper, a review of a micro-Raman scattering study on various lead and barium-based ABO3 perovskites (A = Pb, La, Ba, Sr, Ce, Gd, Nd and B = Ti, Zr), Aurivillius-type Bi-layered compounds (SrBi2Ta2O9, Bi4Ti3O12) and their solid solutions useful in a broad range of device applications.
Journal ArticleDOI

The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film

TL;DR: This study strongly suggests that the HfO2-based materials are promising for various ferroelectric applications because of their comparable ferro electric properties including polarization and Curie temperature to conventional ferroElectric materials together with the reported excellent scalability in thickness and compatibility with practical manufacturing processes.
References
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Journal ArticleDOI

A family of ferroelectric bismuth compounds

TL;DR: In this paper, a dielectric study revealed ferroelectricity in the following compounds: MeBi2R2O2 (Me  Ba,Pb, Sr and R ǫ Nb, Ta), MeBi4TiNbO9 (Me 0.5Bi4.5), Me0.5Ti4O15 (Me, K, Na), Me2Bi4O5O18 (Me, Pb, S), Me 0.
Journal ArticleDOI

Structural basis of ferroelectricity in the bismuth titanate family

TL;DR: More than fifty ferroelectrics belong to the Bi4Ti3O12 family, and all consist of Bi2O2 layers interleaved with perovskite-like Mn−1RnO3n+1 layers.
Journal ArticleDOI

Grain Orientation and Electrical Properties of Hot-Forged Bi4Ti3O12 Ceramics

TL;DR: In this paper, the effect of grain orientation on the dielectric properties of hot-forged ferroelectric Bi4Ti3O12 ceramics has been investigated and the properties are compared with ordinarily fired ones.
Journal ArticleDOI

Piezoelectricity in Ceramics of Ferroelectric Bismuth Compound with Layer Structure

TL;DR: In this article, the authors studied the piezoelectric properties of ferroelectric ceramics comprising bismuth compounds with layer structure, such as PbBi2Nb2O9 and Na0.5Bi4.5Ti4O15.
Journal ArticleDOI

Rare Earth Bismuth Titanates

TL;DR: In this paper, the dielectric properties and crystal chemistry of the bismuth titanates are discussed with reference to related structures, and the results of preliminary optical and electrical measurements are given.
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