Journal ArticleDOI
Niobium Doping and Dielectric Anomalies in Bismuth Titanate
TLDR
In this paper, a study of the complex permittivity in bismuth titanate was conducted to reveal the nature of an anomaly in the real part of the permittivities, which occurs below the Curie temperature.Abstract:
A study of the complex permittivity in bismuth titanate was conducted to reveal the nature of an anomaly in the real part of the permittivity, which occurs below the Curie temperature. This anomaly is frequency dependent and is caused by a combination of two relaxation phenomena that appear in the imaginary part of the permittivity. One of the relaxations showed classic characteristics of an ion-jump process. Niobium doping suppressed this relaxation and eliminated the nonferroelectric anomaly in permittivity. Niobium is proposed to affect the ion-jump relaxation through a decrease in the concentration and possibly the mobility of oxygen vacancies.read more
Citations
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Book ChapterDOI
Hysteresis in Piezoelectric and Ferroelectric Materials
TL;DR: In this paper, the hysteresis of piezoelectric ferroelectric materials is investigated in the context of the construction of a ferroelectric ferromagnetic circuit.
Journal ArticleDOI
Dielectric permittivity and electric modulus in Bi2Ti4O11
TL;DR: Frequency and temperature dependences of dielectric permittivity and electric modulus of pure and Ba-doped Bi2Ti4O11 were studied in the ranges of 10−1-106'Hz and −150-350'°C, respectively as discussed by the authors.
Journal ArticleDOI
Doping effect on the dielectric property in bismuth titanate
TL;DR: In this article, the dielectric property complemented by the mechanical measurement (internal friction) in the doped Bi4Ti3O12 [Bi4−xLaxTi3 O12] and Bi4−y/3Ti3−yNbyO12] was systematically investigated from room temperature to 350°C.
Journal ArticleDOI
Oxygen-vacancy-related dielectric relaxations in SrTiO3 at high temperatures
TL;DR: In this article, the dielectric properties of both single crystal and single crystal SrTiO3 samples in the temperature from room temperature to 1073 K were investigated and two relaxations were observed in both samples.
Journal ArticleDOI
Correlation among oxygen vacancies in bismuth titanate ferroelectric ceramics
TL;DR: In this paper, a dielectric loss peak with the relaxation-type characteristic was observed at about 370K at 100Hz frequency, which was confirmed to be associated with the migration of oxygen vacancies inside ceramics.
References
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Journal ArticleDOI
Topotactical reactions with ferrimagnetic oxides having hexagonal crystal structures—I
TL;DR: In this article, a new method is described for the preparation of polycrystalline materials with oriented crystals by reaction of the oriented grains of a strongly anisotropic ferrimagnetic with non-oriented grains of usually non-magnetic components.
Journal ArticleDOI
A family of ferroelectric bismuth compounds
TL;DR: In this paper, a dielectric study revealed ferroelectricity in the following compounds: MeBi2R2O2 (Me Ba,Pb, Sr and R ǫ Nb, Ta), MeBi4TiNbO9 (Me 0.5Bi4.5), Me0.5Ti4O15 (Me, K, Na), Me2Bi4O5O18 (Me, Pb, S), Me 0.
Journal ArticleDOI
Microstructure, Electrical Conductivity, and Piezoelectric Properties of Bismuth Titanate
TL;DR: In this article, the effects of microstructure, atmosphere, and several dopants on the electrical conductivity of bismuth titanate (Bi4Ti3O12, BIT) were investigated.
Journal ArticleDOI
The crystal chemistry underlying ferroelectricity in Bi4Ti3O12, Bi3TiNbO9, and Bi2WO6
TL;DR: In this article, the main structural cause of ferroelectricity in Bi4Ti3O12 and Bi3TiNbO9 is shown to be the a-axis displacement of Bi atoms in the perovskite A sites with respect to the chains of TiO6 octahedra.
Journal ArticleDOI
Dielectric Properties of Bismuth Titanate
A. Fouskova,L. E. Cross +1 more
TL;DR: In this article, threeterminal dielectric measurements of the weak field permittivity have been carried out on single crystals of bismuth titanate (Bi4Ti3O12), which contained only ''narrowangle'' twin walls.