Electrical transport properties of In2Se3

TLDR: In this article, the electrical transport properties of In2Se3 are investigated and an attempt is made to elucidate the confusion concerning structure and polymorphism of the semiconductors.

Abstract: The electrical transport properties of In2Se3 are investigated. An attempt is made to elucidate the confusion concerning structure and polymorphism. Secondly measurements are made in high temperature range (α-β transition) and low temperature range on annealed and quenched samples. An unusual temperature dependence of the mobility is found that might be attributed to the defective structure of the stoichiometric vacancies in the cationic sublattice. The post-preparation annealing effect is also studied in detail and the difference is reported between an annealed and quenched-annealed sample. Les proprietes de transport electriques do In2Se3 ont ete etudiees. Tout d'abord, nous essayons d'elucider la confusion existant sur la structure et le polymorphisme du materiau. Puis nous decrivons les mesures effectuees ae hautes temperatures (region de la transition de phase α-β) et aux basses temperatures sur des echantillons trempes et recuits. La variation de la mobilite en fonction de la temperature n'est pas celle d'un semiconducteur classique; elle peut-ětre attribuee ae la structure lacunaire des sites cationiques et aux defauts de stoechiometrie. Nous avons aussi etudie en detail l'effet de recuit sur un echantillon trempe et l'avons compare avec un echantillon recuit lors de la preparation.