Journal ArticleDOI
Electron Energy Levels in GaAs/Ga1-xAlxAs Heterojunctions
M. Tomak,V. K. Godwin +1 more
TLDR
In this paper, a theoretical study of the subband structure and impurity related levels in GaAs/Ga1−xAlxAs heterojunction is given. And a theoretical analysis of the impurity level of GaAs is presented.Abstract:
A theoretical study of the subband structure and impurity related levels in GaAs/Ga1−xAlxAs heterojunction is given.read more
Citations
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Journal ArticleDOI
Electronic transport in two-dimensional graphene
TL;DR: In this paper, a broad review of fundamental electronic properties of two-dimensional graphene with the emphasis on density and temperature dependent carrier transport in doped or gated graphene structures is provided.
Journal ArticleDOI
Modeling of Surface-Roughness Scattering in Ultrathin-Body SOI MOSFETs
TL;DR: In this paper, a surface roughness scattering model for ultrathin-body silicon-on-insulator (SOI) MOSFETs is derived, which reduces to Ando's model in the limit of bulk MOSFLs.
Journal ArticleDOI
Continuum of Chiral Luttinger Liquids at the Fractional Quantum Hall Edge
TL;DR: In this paper, the authors studied the power law for tunneling into the edge of the fractional quantum Hall effect over a continuum of filling factors from 1/4 to 1.
Journal ArticleDOI
Unified charge control model and subthreshold current in heterostructure field-effect transistors
Y.H. Byun,K. Lee,Michael Shur +2 more
TL;DR: In this article, a unified analytical charge control model covering the entire range of gate voltages from below and above threshold is developed for heterojunction field-effect transistors (HFETs).
Journal ArticleDOI
Microwave performance of 0.25 [micro sign]m doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures
Q. Chen,R. Gaska,M. Asif Khan,Michael Shur,A. T. Ping,Ilesanmi Adesida,Jinwook Burm,William J. Schaff,L.F. Eastman +8 more
TL;DR: In this article, the authors report the DC and microwave performance of a 0.25 /spl mu/m gate doped channel Al/sub 0.86/N/GaN HFETs exhibiting a cutoff frequency of 37.5 GHz and a maximum frequency of oscillations of 80.4 GHz.
References
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Journal ArticleDOI
Electronic properties of two-dimensional systems
TL;DR: In this paper, the electronic properties of inversion and accumulation layers at semiconductor-insulator interfaces and of other systems that exhibit two-dimensional or quasi-two-dimensional behavior, such as electrons in semiconductor heterojunctions and superlattices and on liquid helium, are reviewed.
Journal ArticleDOI
Electron energy levels in GaAs- Ga 1 − x Al x As heterojunctions
Frank Stern,Sankar Das Sarma +1 more
TL;DR: In this article, the energy levels of electrons in GaAs and their sensitivity to various parameters, including acceptor doping level in the GaAs, heterojunction barrier height, effective mass and dielectric-constant discontinuities, interface grading, and ambient temperature are examined.
Book ChapterDOI
Confined carrier quantum states in ultrathin semiconductor heterostructures
TL;DR: In this paper, the authors studied the effects associated with the quantization of confined carrier motion in ultrathin semiconductor heterostructures and the relevance of these results from band structure analysis to device technology is considered.
Journal ArticleDOI
Light scattering by two-dimensional electron systems in semiconductors
A. Pinczuk,J.M. Worlock +1 more
TL;DR: In this article, resonant inelastic light scattering by multilayer and single-layer two-dimensional electron gases in semiconductors has been discussed, and the depolarization field effects of collective electron-electron interactions have been investigated.
Journal ArticleDOI
Theory of bound states associated with n-type inversion layers on silicon
TL;DR: In this paper, the ground state and two excited states of an electron bound to a charged impurity located at the interface between silicon and silicon dioxide have been investigated, where the interface was taken to be parallel to a (001) plane and a static electric field p perpendicular to the surface was assumed.
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