Journal ArticleDOI
Electron scattering in some II-IV-VI alloy semiconductors
TLDR
In this article, measurements of Hall mobility, thermoelectric power and transverse Nernst-Ettingshausen coefficients have been made on n-and p-type SnxPb1-xTe, CdxPb 1-exTe, MgXPb 2-exSe, CdPb 3-xSe and Mgxpb 1 -exSe alloys with 0less-than-or-eq, slant-less, similar01.Abstract:
Measurements of Hall mobility, thermoelectric power and transverse Nernst-Ettingshausen coefficients have been made on n- and p-type SnxPb1-xTe, CdxPb1-xTe, MgxPb1-xTe, CdxPb1-xSe and MgxPb1-xSe alloys with 0less-than-or-eq, slantxless, similar01. The measurements covered the temperature range 100 to 400 K and the alloys had carrier concentrations within the range 5 × 1017 to 1 × 1019 cm−3. To explain the results several scattering mechanisms were considered and the non-parabolicity of the energy bands was taken into account. It was found that the charge carrier scattering in all the materials under the conditions of experimentation was predominantly by acoustical phonons.read more
Citations
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Journal ArticleDOI
Low effective mass leading to high thermoelectric performance
TL;DR: In this paper, the authors demonstrate that the benefit of light effective mass contributes to high zT in n-type thermoelectric PbTe, where doping and temperature can be used to tune the effective mass.
Journal ArticleDOI
Stabilizing the Optimal Carrier Concentration for High Thermoelectric Efficiency
Yanzhong Pei,Aaron D. LaLonde,Nicholas A. Heinz,Xiaoya Shi,Shiho Iwanaga,Heng Wang,Lidong Chen,G. Jeffrey Snyder +7 more
TL;DR: The band structure of PbTe can be manipulated by alloying with MgTe to control the band degeneracy, used to stabilize the optimal carrier concentration, making it less temperature dependent, demonstrating a new strategy to improve overall thermoelectric efficiency over a broad temperature range.
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Low Effective Mass Leading to High Thermoelectric Performance
TL;DR: In this article, the authors demonstrate the beneficial effect of light effective mass leading to high power factor in n-type thermoelectric PbTe, where doping and temperature can be used to tune the effective mass.
Journal ArticleDOI
Optimum Carrier Concentration in n-Type PbTe Thermoelectrics
Yanzhong Pei,Zachary M. Gibbs,Andrei Gloskovskii,Benjamin Balke,Wolfgang G. Zeier,G. Jeffrey Snyder +5 more
TL;DR: In this paper, the effects of optimizing the thermoelectric figure of merit, zT, by controlling the doping level were investigated. But the effect of the doping on the performance of PbTe was not considered.
Journal ArticleDOI
Thermoelectric Properties of Cu2SnSe4 with Intrinsic Vacancy
TL;DR: In this article, a new compound with intrinsic vacancies on the cation site, called Cu2SnSe4, was proposed as a promising thermoelectric material due to the low lattice thermal conductivity of 0.6 W m −1 K −1 intrinsically resulting from the vacancies.
References
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Journal ArticleDOI
Band structure of indium antimonide
TL;DR: The band structure of InSb is calculated using the k ·. p perturbation approach and assuming that the conduction and valence band extrema are at k = 0 as mentioned in this paper.
Journal ArticleDOI
Deformation Potentials and Mobilities in Non-Polar Crystals
John Bardeen,William Shockley +1 more
TL;DR: In this article, the authors used the method of effective mass, extended to apply to gradual shifts in energy bands resulting from deformations of the crystal lattice, to estimate the interaction between electrons of thermal energy and the acoustical modes of vibration.
Journal ArticleDOI
Electron scattering in InSb
TL;DR: In this article, the effects of electron scattering by acoustical and optical phonons as well as electron-hole scattering on the mobility and thermoelectric power of intrinsic InSb were investigated.