Journal ArticleDOI
Enhanced/suppressed interdiffusion of InGaAs-GaAs-AlGaAs strained layers by controlling impurities and Gallium vacancies
TLDR
In this paper, the interdiffusion coefficients and activation energies were determined by correlating the shift in the photoluminescence peaks with the calculated quantum well transition energies based on an error function composition profile.Abstract:
The interdiffusion of In and Ga at an InGaAs-GaAs interface subjected to different annealing temperatures, times, and environments is demonstrated. The interdiffusion coefficients and activation energies are determined by correlating the shift in the photoluminescence peaks with the calculated quantum well transition energies based on an error function composition profile. The results indicate that a higher In composition InxGa1-xGaAs single quantum well (SQW) leads to a higher interdiffusion coefficient of In and Ga in an As overpressure annealing condition. Also, As overpressure increases the interdiffusion, whereas Ga overpressure reduces the interdiffusion. The thermal activation energies for different In composition InGaAs-GaAs SQW’s (x = 0.057, 0.10, 0.15) range from 3.3 to 2.6 eV for an As overpressure environment and from 3 to 2.23 eV for the Ga overpressure situation. With respect to impurity induced disordering by Zn using a Ga or As overpressure significantly effects the depth of the Zn diffusion front but significant mixing does occur in either case when the impurity front reaches the quantum well.read more
Citations
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Journal ArticleDOI
Point defects and diffusion in thin films of GaAs
TL;DR: In this article, the Gibbs phase rule is applied to several commonly used experimental designs to show why the equilibrium native defect concentrations are generally not defined solely by temperature, and the necessary conditions which determine whether that equilibrium state can be approximated within a short time, are explicitly discussed.
Journal ArticleDOI
Compositional disordering of InGaAs/GaAs heterostructures by low-temperature-grown GaAs layers
TL;DR: In this paper, the disordering of InGaAs/GaAs superlattices using a low-temperature-grown GaAs cap layer (LT•GaAs) by molecular beam epitaxy has been studied.
Journal ArticleDOI
Impurity-induced disordering in III–V multi-quantum wells and superlattices
TL;DR: In this article, the diffusion mechanisms for the dopants are briefly reviewed, and for silicon-doped material a more detailed discussion is provided because of its technological importance, and there has been no critical review of the recent progress in silicon diffusion mechanisms.
Journal ArticleDOI
Diffusion of manganese in GaAs and its effect on layer disordering in AlxGa1−xAs‐GaAs superlattices
TL;DR: In this paper, several diffusion runs of Mn in GaAs are performed in sealed quartz ampoules with four different Mn-containing sources: (a) solid crystal granules of Mn, (b) Mn3As, (c) MnAs, and (d) Mn thin films coated on GaAs substrates.
Journal ArticleDOI
Enhanced/suppressed interdiffusion of lattice-matched and pseudomorphic III–V heterostructures by controlling Ga vacancies
TL;DR: In this paper, the interdiffusion of Ga and Al (AlGaAs-GaAs) and Ga and In (pseudomorphic InGaA-GaA) at a heterojunction can be significantly enhanced or suppressed by controlling group III vacancies and interstitials.
References
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Book
The mathematics of diffusion
TL;DR: Though it incorporates much new material, this new edition preserves the general character of the book in providing a collection of solutions of the equations of diffusion and describing how these solutions may be obtained.
Journal ArticleDOI
Defects in epitaxial multilayers: I. Misfit dislocations*
J.W. Matthews,A.E. Blakeslee +1 more
TL;DR: In this paper, it was shown that the interfaces between layers were made up of large coherent areas separated by long straight misfit dislocations and the Burgers vectors were inclined at 45° to (001) and were of type 1/2a.
Journal ArticleDOI
Disorder of an AlAs‐GaAs superlattice by impurity diffusion
Abstract: Data are presented showing that Zn diffusion into an AlAs‐GaAs superlattice (41 Lz∼45‐A GaAs layers, 40 LB∼150‐A AlAs layers), or into AlxGa1−xAs‐GaAs quantum‐well heterostructures, increases the Al‐Ga interdiffusion at the heterointerfaces and creates, even at low temperature (<600 °C), uniform compositionally disordered AlxGa1−xAs. For the case of the superlattice, the diffusion‐induced disordering causes a change from direct‐gap AlAs‐GaAs (Eg∼1.61 eV) to indirect‐gap AlxGa1−xAs (x∼0.77, EgX∼2.08 eV).
Journal ArticleDOI
Atom diffusion and impurity‐induced layer disordering in quantum well III‐V semiconductor heterostructures
D. G. Deppe,N. Holonyak +1 more
TL;DR: In this article, a large variety of experimental data on IILD are discussed and provide newer information and further perspective on crystal self-diffusion, impurity diffusion, and also the important defect mechanisms that control diffusion in AlxGa1−xAs-GaAs, and in related III-V semiconductors.
Journal ArticleDOI
Strained-layer superlattices from lattice mismatched materials
TL;DR: In this paper, the electronic properties of superlattices made from lattice mismatched materials were studied as a function of layer thicknesses using a tight binding model, and the super-lattice band gaps were found to depend on the layer thickness.