Journal ArticleDOI
Epitaxial growth rate measurements during molecular beam epitaxy
A. J. SpringThorpe,A. Majeed +1 more
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TLDR
In this paper, a narrow optical bandpass pyrometer was used to measure the surface temperature during the deposition of heteroepitaxial structures when measured using a narrow-optical bandpass Pyrometer.Abstract:
Apparent oscillations in surface temperature occur during the deposition of heteroepitaxial structures when measured using a narrow optical bandpass pyrometer. The oscillation period can be related to the growth rate of the material being deposited, and provides a convenient method for rapid in situ calibration. For Ga1−xAlxAs alloys the oscillation periods can be directly related to the alloy composition. The pyrometer optics can also be used in conjunction with external light sources so that simultaneous pyrometry and reflectrometry can be carried out at multiple wavelengths.read more
Citations
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Journal ArticleDOI
Molecular beam epitaxy
TL;DR: Molecular beam epitaxy (MBE) is a process for growing thin, epitaxial films of a wide variety of materials, ranging from oxides to semiconductors to metals.
Journal ArticleDOI
A virtual interface method for extracting growth rates and high temperature optical constants from thin semiconductor films using in situ normal incidence reflectance
W. G. Breiland,K. P. Killeen +1 more
TL;DR: In this article, the optical constants and growth rates of GaAs and AlAs at 634 C have been obtained over a wavelength range of 400-990 nm with this method and agree with values obtained by others using ellipsometry.
Journal ArticleDOI
Efficiency of NH3 as nitrogen source for GaN molecular beam epitaxy
TL;DR: In this paper, optical reflectivity measurements were used to evaluate the part of NH3 flux which reacts with a Ga-terminated GaN surface or with Ga-flux simultaneously impinging on the surface.
Journal ArticleDOI
In situ growth rate measurement and nucleation enhancement for microwave plasma CVD of diamond
TL;DR: In this article, the laser reflection interferometry (LRI) has been shown to be a useful in situ technique for measuring growth rate of diamond during microwave plasma chemical vapor deposition (MPCVD).
Book ChapterDOI
The Thermal Radiative Properties of Semiconductors
TL;DR: The spectral emissivity of a wafer affects the amount of radiation emitted at the pyrometer wavelength, and determines temperature measurement errors in pyrometry as discussed by the authors, and the total absorptivity is related to the efficiency of coupling lamp radiation to the wafer.