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Ethanol sensing characteristics of ambient temperature sonochemically synthesized ZnO nanotubes
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TLDR
In this paper, ZnO nanotubes were synthesized by a sonochemical method at low temperature, and the length and diameter of the obtained nanotube were 1.5-2μm and 250-nm, respectively, and walls were about 30-nm in thickness.Abstract:
ZnO nanotubes were synthesized by a sonochemical method at low temperature. The length and the diameter of the obtained nanotubes were 1.5–2 μm and 250 nm, respectively, and the walls were about 30 nm in thickness. The sensors fabricated from the nanotubes exhibited excellent ethanol sensing properties at a working temperature of 300 °C. The nanotubes can detect ethanol vapor with concentration down to 1 ppm and also showed good sensing characteristics at relatively low temperature. Our results demonstrated that the ZnO nanotubes were very promising for gas sensors with good sensing characteristics.read more
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Detection of hazardous volatile organic compounds (VOCs) by metal oxide nanostructures-based gas sensors: A review
TL;DR: In this paper, the authors extensively review recent developments in this field, focusing the attention on the detection of some common VOCs, including acetone (C3H6O), acetylene (C2H2), benzene (C6H6), cyclohexene (Cyclohexenene) and 2-propanol (C7H8O), by means of conductometric solid state sensors based on nanostructured semiconducting metal oxides.
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Two-Dimensional Materials for Sensing: Graphene and Beyond
TL;DR: In this paper, the authors provide the latest advancements in the field of gas sensors based on various two-dimensional materials with the main focus on sensor performance metrics such as sensitivity, specificity, detection limit, response time, and reversibility.
Journal ArticleDOI
High-performance gas sensor based on ZnO nanowires functionalized by Au nanoparticles
TL;DR: In this paper, a high performance gas sensor based on Au-functionalized ZnO nanorods was fabricated, where Au nanoparticles were successfully immobilized onto the surface of ZnOs to serve as a sensitizer by a facile solution reduction process.
Journal ArticleDOI
Sensor response formula for sensor based on ZnO nanostructures
TL;DR: In this article, a new and general formula to describe ethanol adsorption mechanism underlying the response enhancement of ZnO nanostructure sensors is proposed, which can be used to explain response enhancement due to effect of metal doping, surface-to-volume ratio and surface depletion layer.
Journal ArticleDOI
Highly sensitive and selective triethylamine-sensing properties of nanosheets directly grown on ceramic tube by forming NiO/ZnO PN heterojunction
TL;DR: In this article, a highly sensitive and selective nanostructured triethylamine (TEA) gas sensor has been fabricated successfully by designing PN heterojunction consisting of ZnO nanosheets and NiO nanoparticles.
References
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Journal ArticleDOI
Room-temperature ultraviolet nanowire nanolasers
Michael H. Huang,Samuel S. Mao,Henning Feick,Haoquan Yan,Yiying Wu,Hannes Kind,Eicke R. Weber,Richard E. Russo,Peidong Yang,Peidong Yang +9 more
TL;DR: Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated and self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process.
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Fabrication and ethanol sensing characteristics of ZnO nanowire gas sensors
TL;DR: In this paper, ZnO nanowires gas sensors were fabricated with microelectromechanical system technology and ethanol-sensing characteristics were investigated, and the sensor exhibited high sensitivity and fast response to ethanol gas at a work temperature of 300°C.
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ZnO nanowire field-effect transistor and oxygen sensing property
TL;DR: In this paper, single-crystal ZnO nanowires are synthesized using a vapor trapping chemical vapor deposition method and configured as field effect transistors, and electrical transport studies show n-type semiconducting behavior with a carrier concentration of ∼107cm−1 and an electron mobility of ∼17cm2∕Vs.
Journal ArticleDOI
Effect of nitrogen on band alignment in HfSiON gate dielectrics
Safak Sayan,Nhan V. Nguyen,James R. Ehrstein,James J. Chambers,Mark R. Visokay,Manuel Quevedo-Lopez,Luigi Colombo,D. Yoder,Igor Levin,Daniel A. Fischer,M. Paunescu,Ozgur Celik,Eric Garfunkel +12 more
TL;DR: In this paper, the authors studied the band alignment of HfSiO and hfSiON films by soft x-ray photoemission, oxygen K-edge xray absorption, and spectroscopic ellipsometry.
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ZnO nanowire transistors.
TL;DR: A dynamic gate effect that seems to involve mobile surface charges and causes hysteresis in the transconductance, among other effects is described.