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Nhan V. Nguyen

Researcher at National Institute of Standards and Technology

Publications -  77
Citations -  2450

Nhan V. Nguyen is an academic researcher from National Institute of Standards and Technology. The author has contributed to research in topics: Ellipsometry & Thin film. The author has an hindex of 21, co-authored 76 publications receiving 2199 citations.

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Effect of nitrogen on band alignment in HfSiON gate dielectrics

TL;DR: In this paper, the authors studied the band alignment of HfSiO and hfSiON films by soft x-ray photoemission, oxygen K-edge xray absorption, and spectroscopic ellipsometry.
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Spectroscopic ellipsometry characterization of high-k dielectric HfO2 thin films and the high-temperature annealing effects on their optical properties

TL;DR: In this paper, the optical properties of a set of high-k dielectric HfO2 films annealed at various high temperatures were determined by spectroscopic ellipsometry.
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Sub-bandgap defect states in polycrystalline hafnium oxide and their suppression by admixture of silicon

TL;DR: The crystallinity of atomic layer deposition hafnium oxide was found to be thickness dependent, with the thinnest films being amorphous and thick films being at least partially crystalline as discussed by the authors.
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Critical Review of the Current Status of Thickness Measurements for Ultrathin SiO2 on Si, Part V: Results of a CCQM Pilot Study

TL;DR: In this paper, a study was carried out for the measurement of ultrathin SiO on (100) and (111) orientation silicon wafer in the thickness range 1.5-8 nm.