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Evanescently coupled photodiodes integrating a double-stage taper for 40-Gb/s applications-compared performance with side-illuminated photodiodes

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TLDR
In this paper, double-stage taper photodiodes (DSTPs) have been developed for 40-Gb/s applications with high efficiency, ultrawide band, high optical power handling capability, and low-cost module fabrication.
Abstract
The design, fabrication, and performance of double-stage taper photodiodes (DSTPs) are reported. The objective of this work is to develop devices compatible with 40-Gb/s applications. Such devices require high efficiency, ultrawide band, high optical power handling capability, and compatibility with low-cost module fabrication. The integration of mode size converters improves both the coupling efficiency and the responsivity with a large fiber mode diameter. Responsivity of 0.6 A/W and 0.45 A/W are achieved with a 6-/spl mu/m fiber mode diameter and cleaved fiber, respectively, providing relaxed alignment tolerances (/spl plusmn/1.6 /spl mu/m and /spl plusmn/2 /spl mu/m, respectively), compatible with cost-effective packaging techniques. DSTPs also offer a wide bandwidth greater than 40 GHz and transverse-electric/transverse-magnetic polarization dependence lower than 0.2 dB. Furthermore, a DSTP saturation current as high as 11 mA results in optical power handling greater than +10 dBm and a high output voltage of 0.8 V. These capabilities allow the photodiode to drive the decision circuit without the need of a broad-band electrical amplifier. The DSTP devices presented here demonstrate higher responsivities with large fiber mode diameter and better optical power handling capabilities and are compared with classical side-illuminated photodiodes.

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Citations
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Journal ArticleDOI

Limits on the performance of RF-over-fiber links and their impact on device design

TL;DR: In this article, the authors present a review of the development of devices enabling link performance closer to these limits, including (but not limited to): cascade lasers that permit broadband direct modulation links with gain > 0 dB, injection-locked edge-and surface-emitting lasers at 1300 and 1550 nm with modulation frequency responses as great as 40 GHz, and high-speed photodetectors with high saturation currents, e.g., a 20 GHz device with a saturation current of 90 mA and a 55-GHz device with saturation at 50 mA.
Journal ArticleDOI

Corrections to "Limits on the Performance of RF-Over-Fiber Links and Their Impact on Device Design"

TL;DR: The component developments necessary for higher performance RF-over-fiber links are summarized, i.e., semiconductor lasers that have higher slope efficiency and bandwidth and lower relative intensity noise (RIN) at reasonable bias current levels; continuous wave lasers (for external modulation) with higher fiber-coupled power and lower RIN; higher frequency lower loss external modulators with more linear transfer functions and lower V/sub /spl pi// that can withstand larger CW optical powers.
Journal ArticleDOI

Recent Advances in Telecommunications Avalanche Photodiodes

TL;DR: A brief review of APD fundamentals and some of the significant advances is presented in this article, where the authors describe the significant improvements of APDs for optical fiber communication systems as a result of improvements in materials and the development of advanced device structures.
Journal ArticleDOI

Very high-responsivity evanescently coupled photodiodes integrating a short planar multimode waveguide for high-speed applications

TL;DR: In this paper, an evanescently coupled photodiode that utilizes a short planar multimode waveguide was reported with very high responsivity with polarization dependence less than 0.5 dB, 48 GHz bandwidth, and 11-mA saturation current.
Journal ArticleDOI

High-performance evanescently edge coupled photodiodes with partially p-doped photoabsorption layer at 1.55-/spl mu/m wavelength

TL;DR: In this paper, a high performance evanescently coupled photodiode (ECPD) with the partially p-doped photoabsorption layer was demonstrated, which can exhibit much higher output saturation current (power) and electrical bandwidth without sacrificing the quantum efficiency performance.
References
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Journal ArticleDOI

Ultrawide-band long-wavelength p-i-n photodetectors

TL;DR: In this paper, the authors compared different designs for very high-speed (millimeter-wave) longwavelength photodetectors, different materials for such detectors, and different ways of characterizing the speed of these devices.
Journal ArticleDOI

Ultrawide-band/high-frequency photodetectors

TL;DR: In this article, two main trends in the progress of ultrawide-band/high-frequency photodetectors (PD's), improving the bandwidth-efficiency product and obtaining a high saturation current, are reviewed.
Journal ArticleDOI

110-GHz, 50%-efficiency mushroom-mesa waveguide p-i-n photodiode for a 1.55-/spl mu/m wavelength

TL;DR: In this paper, a mushroom-mesa structure was proposed to reduce the CR-time constant which originates from the waveguide photodiode structure, which achieved a record bandwidth efficiency of 55 GHz for long wavelength p-i-n photodetectors.
Journal ArticleDOI

Measurement of absorption coefficients of Ga 0.47 In 0.53 As over the wavelength range 1.0-1.7 μm

TL;DR: The absorption coefficient of p + -, p - -and n - -doped Ga 0.47 In 0.53 As layers, grown lattice-matched to InP, has been calculated over the wavelength range 1.0-1.7 μm from transmission and reflection measurements.
Journal ArticleDOI

Optical parameters of InP-based waveguides

TL;DR: In this paper, the quaternary alloys InGaAsP, matched in their lattice constant to InP, are considered in view of optical-waveguide applications and the parameters, most important in this connexion, are the refractive index n and the optical absorption coefficient α.
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