Journal ArticleDOI
Evidence for the domination of heavy holes and lattice scattering in SnTe from electrical transport measurements on polycrystalline thin films
N Ganesan,V Sivaramakrishnan +1 more
TLDR
In this article, the influence of temperature and thickness on the electrical resistivity and Seebeck coefficient of polycrystalline SnTe thin films was investigated in detail and it was concluded that heavy holes are the dominant charge carriers.Abstract:
The influence of temperature and thickness on the electrical resistivity and Seebeck coefficient of polycrystalline SnTe thin films was investigated in detail. The size effect data for the electrical resistivity and Seebeck coefficient fit very well with Tellier's effective mean free path model. Different physical parameters such as Fermi energy (EF) and effective mass (m*) were evaluated. From this it is concluded that heavy holes are the dominant charge carriers. The Seebeck coefficient data were also fitted into the Jain-Verma expression to evaluate the scattering parameter (b) and the value of b clearly indicates the dominance of lattice scattering in SnTe.read more
Citations
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Journal ArticleDOI
High thermoelectric performance by resonant dopant indium in nanostructured SnTe
Qian Zhang,Bolin Liao,Yucheng Lan,Kevin Lukas,Weishu Liu,Keivan Esfarjani,Cyril Opeil,David Broido,Gang Chen,Zhifeng Ren +9 more
TL;DR: This work studied the thermoelectric properties of nanostructured SnTe with different dopants, and found indium-doped SnTe showed extraordinarily large Seebeck coefficients that cannot be explained properly by the conventional two-valence band model.
References
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Journal ArticleDOI
A theoretical description of grain boundary electron scattering by an effective mean free path
TL;DR: A mathematical analysis based on the Mayadas-Shatzkes model indicates that an effective mean free path may be defined in order to describe electronic conduction in both thin polycrystalline and monocrystalline metallic films as discussed by the authors.
Journal ArticleDOI
The Mayadas-Shatzkes conduction model treated as a Fuchs-Sondheimer model
TL;DR: By starting from the Mayadas-Shatzkes model an effective mean free path l g is defined to describe electronic conduction in thin polycrystalline metallic films; the Fuchs-Sondheimer model can then be used to calculate the film resistivity and its temperature coefficient.
Journal ArticleDOI
Statistical model of electrical conduction in polycrystalline metals
TL;DR: In this paper, a new statistical model for the effect of grain boundaries on electrical conduction is proposed, and the electronic transmission coefficient t is given as an exponential function of the electron path assuming that t ≈ 1.
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