Journal ArticleDOI
The Mayadas-Shatzkes conduction model treated as a Fuchs-Sondheimer model
TLDR
By starting from the Mayadas-Shatzkes model an effective mean free path l g is defined to describe electronic conduction in thin polycrystalline metallic films; the Fuchs-Sondheimer model can then be used to calculate the film resistivity and its temperature coefficient.About:
This article is published in Thin Solid Films.The article was published on 1977-07-15. It has received 63 citations till now. The article focuses on the topics: Mean free path & Temperature coefficient.read more
Citations
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Journal ArticleDOI
A theoretical description of grain boundary electron scattering by an effective mean free path
TL;DR: A mathematical analysis based on the Mayadas-Shatzkes model indicates that an effective mean free path may be defined in order to describe electronic conduction in both thin polycrystalline and monocrystalline metallic films as discussed by the authors.
Journal ArticleDOI
Influence of grain boundary scattering on the electrical properties of platinum nanofilms
TL;DR: In this paper, the electrical conductivity and temperature coefficient of resistance of polycrystalline platinum nanofilms have been investigated experimentally and theoretically, and the results show that these electrical properties have been greatly reduced mainly by grain boundary scattering.
Journal ArticleDOI
Thermoelectric power of thin polycrystalline metal films in an effective mean free path model
TL;DR: In this paper, the theoretical expression for the thermoelectric power of polycrystalline metal films is derived from an effective Fuchs-Sondheimer conduction model, and a procedure is proposed to determine the variation in the electronic mean free path.
Journal ArticleDOI
Variations of energy gap, resistivity, and temperature coefficient of resistivity in annealed beta -Ag2Se thin films.
VD Das,D Karunakaran +1 more
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Electrical transport in metallic films
TL;DR: In this article, the authors proposed a model that includes scattering from both film surfaces and grain boundaries, and studied the quasiclassical electrical transport in metallic films, and the in-plane electric conductivity of metallic films is obtained, and theoretical results are shown to be in good agreement with experimental data.
References
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Journal ArticleDOI
The mean free path of electrons in metals
TL;DR: The mean free path of electrons in metals has been studied in this paper, where the authors show that electrons follow a straight line along the path of the electron in the metal atom.
Journal ArticleDOI
Electrical-Resistivity Model for Polycrystalline Films: the Case of Arbitrary Reflection at External Surfaces
A. F. Mayadas,M. Shatzkes +1 more
TL;DR: In this paper, the total resistivity of a thin metal film is calculated from a model in which three types of electron scattering mechanisms are simultaneously operative: an isotropic background scattering (due to the combined effects of phonons and point defects), scattering due to a distribution of planar potentials (grain boundaries), and scattering by the external surfaces.
Journal ArticleDOI
Intrinsic Resistivity and Electron Mean Free Path in Aluminum Films
TL;DR: In this article, the authors measured the electrical resistivity at 4.2°K and the mean free path at 2.5 µm in an ion-pumped ultrahigh-vacuum (UHV) system and in a conventional oil-pump UHV system on unheated glass substrates.
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The electrical resistivity and resistance-temperature characteristics of thin titanium films
B. Singh,N.A. Surplice +1 more
TL;DR: In this paper, the electrical resistivity and resistance-temperature characteristics of titanium films, measured in vacuum, were described. But the measured resistivities for the continuous freshly prepared films are too high to be explained on the basis of the Fuchs-Sondheimer theory1, 2 for diffuse scattering, and are attributed to porosity and the gaseous impurities taken down during and after their formation.