Journal ArticleDOI
Extraordinary magnetoresistance in externally shunted van der Pauw plates
TLDR
In this article, the extraordinary magnetoresistance exhibited by a composite van der Pauw (vdP) disk consisting of a semiconductor with an internal shunt can also be obtained from an electrically equivalent, externally shunted structure that is amenable to fabrication in the mesoscopic sizes required for important magnetic sensor applications.Abstract:
We show that extraordinary magnetoresistance (EMR) exhibited by a composite van der Pauw (vdP) disk consisting of a semiconductor with an internal shunt can also be obtained from an electrically equivalent, externally shunted structure that is amenable to fabrication in the mesoscopic sizes required for important magnetic sensor applications. As an example, we use bilinear conformal mapping to transform the composite vdP disk into an externally shunted rectangular plate and calculate its EMR by solving Laplace’s equation with appropriate boundary conditions using no adjustable parameters. The calculations are in good agreement with measurements of InSb plates with Au shunts. Room-temperature EMR values as high as 550% at 0.05 T are obtained.read more
Citations
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Journal ArticleDOI
Micro-Hall devices: performance, technologies and applications
TL;DR: In this review paper, the performance (in particular the magnetic field resolution), micro-fabrication technologies and applications of micrometer sized Hall effect devices are summarized.
Journal ArticleDOI
Nonmagnetic semiconductors as read-head sensors for ultra-high-density magnetic recording
Stuart A. Solin,D. R. Hines,Alistair Rowe,Jaw-Shen Tsai,Yuri Pashkin,S. J. Chung,N. Goel,M. B. Santos +7 more
TL;DR: A mesoscopic nonmagnetic magnetoresistive read-head sensor based on the recently reported extraordinary magnetoresistance (EMR) effect has been fabricated from a narrow-gap Si-doped InSb quantum well as discussed by the authors.
Journal ArticleDOI
Tunable Nanoscale Graphene Magnetometers
TL;DR: Graphene extraordinary magnetoresistance devices that combine the Hall effect and enhanced geometric magnetoreistance are demonstrated, yielding sensitivities rivaling that of state of the art sensors but do so with subnanometer sense layer thickness at the sensor surface.
Journal ArticleDOI
Temperature Dependence of Magnetotransport in Extraordinary Magnetoresistance Devices
T.D. Boone,Liesl Folks,J. A. Katine,S. Maat,E. Marinero,Sergio Nicoletti,Mark Field,G. Sullivan,Amal Ikhlassi,Berinder Brar,Bruce Alvin Gurney +10 more
TL;DR: In this article, the magnetic resistance of EMR devices is modulated by magnetic fields due to the Lorentz force steering an electron current between the high resistance semiconductor and the low resistance metallic shunt, and they were tested in magnetic fields up to 2 T perpendicular to the 2DEG plane and excitation currents up to 100 muA.
Journal ArticleDOI
Room temperature extraordinary magnetoresistance of nonmagnetic narrow-gap semiconductor/metal composites: application to read-head sensors for ultrahigh-density magnetic recording
TL;DR: In this paper, the room temperature extraordinary magnetoresistance (EMR) of a mesoscopic sensor structure prepared from an InSb quantum well of dimension 30 nm wide/spl times/100 nm high/pl times/3 /spl mu/m long is reported.
References
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Book
Hall effect devices
TL;DR: The Hall Effect Hall Elements: Theory of Operation Hall Elements as Magnetic Sensors Magnetic-Sensitive Field Effect and Bipolar Devices Applications of Hall Magnetic Sensorors Hall Devices as a Means for Characterising Semiconductor Materials.
Journal ArticleDOI
Enhanced Room-Temperature Geometric Magnetoresistance in Inhomogeneous Narrow-Gap Semiconductors.
TL;DR: A symmetric van der Pauw disk of homogeneous nonmagnetic indium antimonide with an embedded concentric gold inhomogeneity is found to exhibit room-temperature geometric magnetoresistance as high as 100, 9100, and 750,000 percent at magnetic fields of 0.05, 0.25, and 4.0 teslas.
Journal ArticleDOI
Colossal magnetoresistance in La‐Ca‐Mn‐O ferromagnetic thin films (invited)
TL;DR: In this paper, a colossal magnetoresistance effect with more than a thousandfold change in resistivity (ΔR/RH=127 000% at 77 K, H=6 T) has been obtained in epitaxially grown La•Ca•Mn•O thin films.
Journal ArticleDOI
Magnetoresistance values exceeding 21% in symmetric spin valves
William F. Egelhoff,T. Ha,Raja Devesh Kumar Misra,Y Kadmon,J. Nir,Cedric J. Powell,Mark D. Stiles,Robert D. McMichael,Chien-Li Lin,J. M. Sivertsen,Jack H. Judy,Kentaro Takano,Ami E. Berkowitz,T. C. Anthony,J. A. Brug +14 more
TL;DR: In this paper, the giant magnetoresistance (GMR) effect exceeding 21% in symmetric spin valves was reported, the highest value ever reported for such structures, and the key elements in this achievement were the use of a Co/Cu/Co/co/cu/Co+Co multilayer, in which the center Co layer is substantially thicker than the outer Co layers and the antiferromagnetic insulator NiO at the top and bottom to pin the adjacent Co layers magnetically.
Journal ArticleDOI
Magnetic Recording Head Materials
TL;DR: The magnetic recording heads that are used in high-performance disk drives typically consist of separate magnetoresistive read and inductive write heads, where previously a single inductive head performed both functions as discussed by the authors.