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Proceedings ArticleDOI

Fast optical amplifier gate array for WDM routing and switching applications

TLDR
In this article, the first sub-nanosecond switching of a four clamped gain optical amplifiers driven by integrated InP HBT drivers is presented, which is the first time for such an array.
Abstract
Summary form only given. Recently, arrays of four clamped gain semiconductor optical amplifiers (CG-SOAs) which were fully packaged have been reported with excellent performances using bulk tensile strained active material. Here we believe we present for the first time subnanosecond switching of such a four CG-SOA array driven by integrated InP HBT drivers.

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Citations
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Patent

Systems And Methods For On-Chip Data Communication

TL;DR: In this article, an on-chip data communications infrastructure includes a hybrid, photonic/electronic network including a plurality of interconnected optical switches, each under the control of an electronic router.
Journal ArticleDOI

Resources sharing in optical packet switches with limited-range wavelength converters

TL;DR: Analytical results show how the use of a reduced number of LRWCs with small range allows the switch to obtain the same performances of an architecture equipped with all of the wavelength converters and using a full wavelength conversion.
Proceedings ArticleDOI

A highly integrated 32-SOA gates optoelectronic module suitable for IP multi-terabit optical packet routers

TL;DR: For the first time, the realization and the performance of a compact optoelectronic 32-SOA module including their drivers is reported and preliminary experiments in an optical packet switching matrix for IP multi-terabit router.
Patent

Optical amplifier with damped relaxation oscillation

TL;DR: An optical amplifier with damped relaxation oscillation as discussed by the authors, where a large distance between mirrors in a VLSOA increases damping for the relaxation oscillations, and a feedback loop is used to damped out relaxation oscillators.
References
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Journal ArticleDOI

12 Gbit/s laser diode and optical modulator drivers with InP/InGaAs double HBTs

TL;DR: In this paper, the InP/InGaAs double heterojunction bipolar transistors (HBTs) with f/sub T/=73 GHz and f/ sub max/=112 GHz were used to achieve output voltages of 3.5 V and current swings of 140 mA across 25 /spl Omega/ loads with rise and fall times of 60 ps.
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