Journal ArticleDOI
Fast silicon p doped low temperature bolometer
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TLDR
In this article, the construction of a fast silicon p doped low temperature bolometer is described, which is a 5 × 5 × 03 mm Si n-type chip whose surface has been implanted with p doses of the order of 1018cm−3.About:
This article is published in Cryogenics.The article was published on 1984-12-01. It has received 12 citations till now. The article focuses on the topics: Bolometer & Responsivity.read more
Citations
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Journal ArticleDOI
Thermal detection of particles using bolometric devices
TL;DR: In this paper, the authors developed a system for studying the behavior of various kinds of calorimeters from the point of view of their thermoelectrical properties and also their characteristics as particle detectors.
Journal ArticleDOI
Fast P‐doped silicon bolometer for detecting heat pulses
TL;DR: A new detector of ballistic phonons is presented in this article, which is a P-doped Si bolometer realized on top of a (100)Si crystal by ion implantation.
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Heat capacity of low temperature Ge- and Si-calorimeters and optimazation of As-implanted silicon thermistors
A. Alessandrello,D.V. Camin,G.F. Cerofolini,E. Fiorini,A. Giuliani,C. Liguori,L. Meda,T. O. Niinikoski,A. Rijllart +8 more
TL;DR: In this article, a reproducible process for the fabrications of high sensitivity thermistors is described, and the results in the range 80-1000 mK obtained with two different test detectors are reported.
Journal ArticleDOI
Low‐temperature bolometer array
TL;DR: In this article, the implementation of a 16-channel, low-temperature bolometer linear detector array is described, whose surfaces are doped with phosphorus by the technique of ionic implantation.
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Giant Temperature Coefficient of Resistivity and Cryogenic Sensitivity in Silicon with Galvanically Displaced Gold Nanoparticles in Freeze-Out Region
TL;DR: It was found that the increase of surface roughness and a number of Au NPs on p-Si results in a higher temperature gradient and thermoelectric power to cause the unusual TCR and Sv values in the samples.
References
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Journal ArticleDOI
Low-Temperature Germanium Bolometer
TL;DR: In this paper, a bolometer using gallium-doped single crystal germanium as the temperature sensitive resistive element was constructed and operated at 2°K with a noise equivalent power of 5×10−13 w and a time constant of 400 μsec.
Journal Article
Low-temperature germanium bolometer
TL;DR: In this article, a bolometer with gallium-doped single crystal germanium as the temperature sensitive resistive element was constructed and operated at 2°K with a noise equivalent power of 5×10 - 1 2 w and a time constant of 400 μsec.
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The General Theory of Bolometer Performance
TL;DR: In this article, a general phenomenological theory of the static and dynamic behavior of bolometers is presented, which assumes as given the fundamental relations between the temperature and resistance of the bolometer, and the past history of the power dissipated within it.
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Effect on electrical properties of segregation of implanted P+ at defect sites in Si
TL;DR: In this paper, P+ was implanted into (111) Si in a nonchanneling direction at 120 keV to a dose of 3'×'1014/cm2 at RT, and the implanted samples were subsequently annealed at 750°C.
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Variable range hopping conduction in the lowest temperature region
TL;DR: In this article, a new version of variable range hopping is proposed taking into account the effect of random nature of the system on the correlation of the energy levels of localized states, and is shown to lead to T-2 dependence of the resistivity in the lowest temperature region.