Journal ArticleDOI
Ferroelectric properties of c-oriented YMnO3 films deposited on Si substrates
TLDR
In this article, the use of RMnO3 (R: rare earth elements) films for metal-ferroelectric-semiconductor field effect transistor (MFSFET)-type ferroelectric random access memories (ferro-electric RAMs) was proposed.Abstract:
We have proposed the use of RMnO3 (R: rare earth elements) films for metal–ferroelectric–semiconductor field effect transistor (MFSFET)-type ferroelectric random access memories (ferroelectric RAMs). This reports the production of YMnO3 films on Si substrates for MFSFET with confirmation of the distinct ferroelectricity by P–E hysteresis and capacitance–voltage (C–V) measurement. (0001)-oriented YMnO3 films were obtained on a (111)Si substrate using a pulsed-laser deposition method. Although the Pt/YMnO3/Si structure exhibits a very small remnant polarization of 1.2 nC/cm2, it has clear ferroelectric polarization switching type C–V characteristics with a memory window of 1.1 V. The dielectric constant and the dissipation factor were 27.8 and 0.035, respectively. The polarization switching characteristics are discussed.read more
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Journal ArticleDOI
Revival of the Magnetoelectric Effect
Abstract: Recent research activities on the linear magnetoelectric (ME) effect?induction of magnetization by an electric field or of polarization by a magnetic field?are reviewed. Beginning with a brief summary of the history of the ME effect since its prediction in 1894, the paper focuses on the present revival of the effect. Two major sources for 'large' ME effects are identified. (i) In composite materials the ME effect is generated as a product property of a magnetostrictive and a piezoelectric compound. A linear ME polarization is induced by a weak ac magnetic field oscillating in the presence of a strong dc bias field. The ME effect is large if the ME coefficient coupling the magnetic and electric fields is large. Experiments on sintered granular composites and on laminated layers of the constituents as well as theories on the interaction between the constituents are described. In the vicinity of electromechanical resonances a ME voltage coefficient of up to 90?V?cm?1?Oe?1 is achieved, which exceeds the ME response of single-phase compounds by 3?5 orders of magnitude. Microwave devices, sensors, transducers and heterogeneous read/write devices are among the suggested technical implementations of the composite ME effect. (ii) In multiferroics the internal magnetic and/or electric fields are enhanced by the presence of multiple long-range ordering. The ME effect is strong enough to trigger magnetic or electrical phase transitions. ME effects in multiferroics are thus 'large' if the corresponding contribution to the free energy is large. Clamped ME switching of electrical and magnetic domains, ferroelectric reorientation induced by applied magnetic fields and induction of ferromagnetic ordering in applied electric fields were observed. Mechanisms favouring multiferroicity are summarized, and multiferroics in reduced dimensions are discussed. In addition to composites and multiferroics, novel and exotic manifestations of ME behaviour are investigated. This includes (i) optical second harmonic generation as a tool to study magnetic, electrical and ME properties in one setup and with access to domain structures; (ii) ME effects in colossal magnetoresistive manganites, superconductors and phosphates of the LiMPO4 type; (iii) the concept of the toroidal moment as manifestation of a ME dipole moment; (iv) pronounced ME effects in photonic crystals with a possibility of electromagnetic unidirectionality. The review concludes with a summary and an outlook to the future development of magnetoelectrics research.
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The single-phase multiferroic oxides: from bulk to thin film
TL;DR: In this article, the experimental status of multiferroics has been presented for both the bulk single phase and the thin film form, and a detailed overview on multiferromagnetic thin films grown artificially (multilayers and nanocomposites) is presented.
Journal ArticleDOI
Synthesis and properties of epitaxial electronic oxide thin-film materials
TL;DR: The growth and properties of electronic oxide thin films are reviewed in this paper, in particular the synthesis of superconducting, insulating, conducting, magnetic, and semiconducting epitaxial oxide structures.
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Oxides, Oxides, and More Oxides: High-κ Oxides, Ferroelectrics, Ferromagnetics, and Multiferroics
TL;DR: In this article, the authors review and critique the recent developments on multifunctional oxide materials, which are gaining a good deal of interest, focusing mainly on high-κ dielectric, ferroelectric, magnetic and multiferroic materials.
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Multiferroic oxide thin films and heterostructures
TL;DR: In this paper, the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices are highlighted, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling.
References
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Journal ArticleDOI
Fatigue-free ferroelectric capacitors with platinum electrodes
C. A-Paz de Araujo,J. D. Cuchiaro,Larry D. McMillan,Michael C. Scott,James F. Scott,James F. Scott +5 more
TL;DR: In this article, the authors describe the preparation and characterization of thin-film capacitors using ferroelectric materials from a large family of layered perovskite oxides, exemplified by SrBi2Ta2O9, SRBi2NbTaO9 and SrBi4Ta4O15.
Journal ArticleDOI
Coupling between the ferroelectric and antiferromagnetic orders in YMnO 3
TL;DR: Anomalies in the dielectric constant and loss tangent have been observed in the ferroelectromagnet YMnO{sub 3} near its N{acute e}el temperature of {approximately}80 K and below its ferroelectric Curie temperature of{approximately}914 K as mentioned in this paper.
Journal ArticleDOI
Epitaxially grown YMnO3 film: New candidate for nonvolatile memory devices
TL;DR: In this paper, the ReMnO3 (Re:rare earth) thin films were proposed as a new candidate for nonvolatile memory devices, and the dielectric properties of the epitaxial and polycrystalline YMNO3 films were almost the same.
Journal ArticleDOI
Coexistence of Magnetic and Electric Ordering in Crystals
G. A. Smolenskii,V. A. Bokov +1 more
TL;DR: In this article, the thermodynamic theory of substances which are ferroelectric and ferromagnetic simultaneously are given in the case of solid solutions based on BiFeO3, which has a perovskite-type structure.
Journal ArticleDOI
Interaction of PbTiO3 Films with Si Substrate
TL;DR: In this article, an investigation was made of the reasons why ferroelectric PbTiO3 films are hard to grow on single-crystal Si substrates, and X-ray photoelectron spectroscopy (XPS) was used to analyze the composition, chemical structure and oxidation state at the interface between the substrate and the film.