Book ChapterDOI
Few Related Applications and Brief Review of Experimental Results
Kamakhya Prasad Ghatak
- pp 371-396
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TLDR
The concept of band gap measurement in the presence of intense external light waves is discussed and additional five related applications in this context are presented.Citations
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Book
Mechanical behavior of materials and structures in microelectronics : symposium held April 30-May 3, 1991, Anaheim, California, U.S.A.
TL;DR: In this paper, the authors present a survey of reliability issues in semiconductors, metals, thin films and coatings, and thin-film and coating applications, and stress-strain and fracture analysis.
References
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Journal ArticleDOI
Optical transmission in triple-film hetero-opals
TL;DR: In this article, angle-resolved transmission of s-polarized light in triple-film hetero-opals has been investigated in the spectral range including high-order photonic band gaps, and compared to the transmission of its constituent single-film opals.
Journal ArticleDOI
Photoluminescence of Ge nanocrystals self-assembled on SiO2
TL;DR: In this paper, low-temperature photoluminescence (PL) measurements were performed to investigate quantum confinement effects on the Ge nanocrystal energy gap and defect states.
Journal ArticleDOI
Photoluminescence from n-type porous silicon layer enhanced by a forward-biased np-junction
TL;DR: A new approach for the fabrication of n-type porous silicon layer is proposed, where sufficient holes can drift straight-upward and pass across the np-junction from p-region to n- region to participate in electrochemical reaction during the etching process with an unfailing supply.
Journal ArticleDOI
Multiphoton photoemission of self-assembled silver nanocrystals
TL;DR: In this paper, a two-photon mechanism was demonstrated and an enhancement due to the surface plasmon resonance (SPR) of the nanocrystal film was observed, due to dipolar interactions and induced by the self-organization of silver nanocrystals.
Journal ArticleDOI
The carrier contribution to the elastic constants in III–V, ternary and quaternary materials in the presence of light waves: Simplified theory, relative comparison and a suggestion for experimental determination
Kamakhya Prasad Ghatak,Sitangshu Bhattacharya,S. Pahari,S.N. Mitra,Probir Kumar Bose,Debashis De +5 more
TL;DR: In this article, the electronic contribution to the elastic constants for III-V, ternary and quaternary materials in the presence of light waves on the basis of newly formulated electron statistics was studied.