Book ChapterDOI
Few Related Applications and Brief Review of Experimental Results
Kamakhya Prasad Ghatak
- pp 371-396
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TLDR
The concept of band gap measurement in the presence of intense external light waves is discussed and additional five related applications in this context are presented.Citations
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Book
Mechanical behavior of materials and structures in microelectronics : symposium held April 30-May 3, 1991, Anaheim, California, U.S.A.
TL;DR: In this paper, the authors present a survey of reliability issues in semiconductors, metals, thin films and coatings, and thin-film and coating applications, and stress-strain and fracture analysis.
References
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Journal ArticleDOI
Photoemission from buried interfaces in SrTiO3/LaTiO3 superlattices.
Masaru Takizawa,Hiroki Wadati,Kiyohisa Tanaka,Masa-aki Hashimoto,T. Yoshida,A. Fujimori,Akira Chikamatsu,Hiroshi Kumigashira,Masaharu Oshima,Kenji Shibuya,Tatehiro Mihara,Tsuyoshi Ohnishi,Mikk Lippmaa,Masashi Kawasaki,Hideomi Koinuma,Satoshi Okamoto,Andrew J. Millis +16 more
TL;DR: For Sr TiO3/LaTiO3 interfaces annealed at high temperatures, the intensity of the incoherent part was found to be dramatically reduced whereas the coherent part with a sharp Fermi cutoff was enhanced due to the spread of charge.
Journal ArticleDOI
Optical properties of porous GaAs
TL;DR: The optical properties of porous GaAs formed electrochemically on n-and p-type GaAs in HCl electrolyte are reported in this article, where the porous structure comprises GaAs crystallites ranging in size from micrometers to nanometers.
Journal ArticleDOI
Optical absorption evidence for quantum confinement effects in porous silicon
TL;DR: In this article, the optical and structural characteristics of various porous Si samples have been correlated, and the optical absorption edge exhibits a strong inverse correlation that is in excellent agreement with theoretical predictions for the optical gap in Si spheres or quantum dots.
Journal ArticleDOI
Volmer–Weber and Stranski–Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm
A. F. Tsatsul’nikov,A. R. Kovsh,A. E. Zhukov,Yu. M. Shernyakov,Yu. G. Musikhin,V. M. Ustinov,N. A. Bert,P. S. Kop’ev,Zh. I. Alferov,Alexander Mintairov,James L. Merz,N. N. Ledentsov,Dieter Bimberg +12 more
TL;DR: In this paper, the authors demonstrate an injection laser based on this kind of InAs-GaAs-AlAs overgrowth and demonstrate a photoluminescence (PL) peak that is redshifted (up to 1.3 μm) compared to PL emission of GaAs-covered QDs.
Journal ArticleDOI
Photoemission Study of Onion Like Quantum Dot Quantum Well and Double Quantum Well Nanocrystals of CdS and HgS
Holger Borchert,Dirk Dorfs,C. McGinley,S. Adam,Thomas Möller,Horst Weller,Alexander Eychmüller +6 more
TL;DR: In this paper, a method for layer thickness determination for core shell nanocrystals is extended to the more complex case of quantum dot quantum well structures, and the onion-like structure of the quantum dot well structures is characterized.