Book ChapterDOI
Few Related Applications and Brief Review of Experimental Results
Kamakhya Prasad Ghatak
- pp 371-396
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TLDR
The concept of band gap measurement in the presence of intense external light waves is discussed and additional five related applications in this context are presented.Citations
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Book
Mechanical behavior of materials and structures in microelectronics : symposium held April 30-May 3, 1991, Anaheim, California, U.S.A.
TL;DR: In this paper, the authors present a survey of reliability issues in semiconductors, metals, thin films and coatings, and thin-film and coating applications, and stress-strain and fracture analysis.
References
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Journal ArticleDOI
On the carrier contribution to the elastic constants in ultrathin films of IV-VI compounds in the presence of a parallel magnetic field
B. R. Nag,Kamakhya P. Ghatak +1 more
TL;DR: In this paper, the authors studied the contribution of the 2D carrier dispersion law to the second and third order elastic constants in ultrathin films of IV-VI compounds in the presence of a parallel magnetic field.
Journal ArticleDOI
Influence of quantum confinement on the carrier contribution to the elastic constants in quantum confined heavily doped non-linear optical and optoelectronic materials: simplified theory and the suggestion for experimental determination
TL;DR: In this paper, the carrier contribution to elastic constants in quantum confined heavily doped non-linear optical compounds was studied on the basis of a newly formulated electron dispersion law taking into account the anisotropies of the effective electron masses and spin orbit splitting constants together with the proper inclusion of the crystal field splitting in the Hamiltonian within the framework of k.p formalism.
Journal ArticleDOI
The Carrier Contribution to the Elastic Constants in Cylindrical Quantum Dot of Optoelectronic Materials in the Presence of Crossed Electric and Magnetic Fields: Simplified Theory and a Suggestion for Experimental Determination
Journal ArticleDOI
A simple theoretical analysis of the thermo-electric power in quantum dots of nonparabolic semiconductors in the presence of a parallel magnetic field
Kamakhya P. Ghatak,B. R. Nag +1 more
TL;DR: In this article, an attempt is made to study the thermoelectric power in quantum dots of non-parabolic semiconductors in the presence of a parallel magnetic field on the basis of a new electron dispersion law.
Journal ArticleDOI
Fast and intense photoluminescence in a SiGe nano-layer embedded in multilayers of Si/SiGe clusters
TL;DR: In this article, the SiGe NL PL does not saturate in output intensity with up to 50 mJ/cm2 of excitation energy density, and it has nearly a 1000 times shorter lifetime compared to CM PL, which peaks at ∼0.8