Journal ArticleDOI
GaAs IMPATT diodes for 60 GHz
M.G. Adlerstein,S.L.G. Chu +1 more
TLDR
In this paper, high performance double-drift Read IMPATT diodes have been demonstrated at 60 GHz with 1.24-W CW output power at 11.4-percent dc to RF conversion efficiency with a junction temperature rise of 225°C.Abstract:
High-performance GaAs double-drift Read IMPATT diodes have been demonstrated at 60 GHz. 1.24-W CW output power at 11.4-percent dc to RF conversion efficiency was obtained with a junction temperature rise of 225°C. The doping profiles and test circuits have not yet been optimized and we expect that still higher power and efficiency should be achievable.read more
Citations
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Journal ArticleDOI
Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources
Aritra Acharyya,J. P. Banerjee +1 more
TL;DR: In this article, the potentiality of impact avalanche transit time (IMPATT) devices based on different semiconductor materials such as GaAs, Si, InP, 4H-SiC and Wurtzite-GaN was explored for operation at terahertz frequencies.
Journal ArticleDOI
Two-terminal millimeter-wave sources
Heribert Eisele,George I. Haddad +1 more
TL;DR: In this paper, basic principles of operation, fundamental power-generation capabilities, and fabrication technologies are reviewed for three groups of two-terminal devices, i.e., resonant-tunneling diodes (RTDs), transferred-electron devices (TEDs), and transit-time Diodes.
Journal ArticleDOI
Selective etching technology for 94 GHz GaAs IMPATT diodes on diamond heat sinks
TL;DR: In this paper, a selective etching method was proposed for 94 GHz GaAs IMPATT diodes operating on diamond heat sinks. The corresponding efficiency was 5.7% at an oscillation frequency of 95 GHz.
Journal ArticleDOI
140 GHz GaAs double-Read IMPATT diodes
M. Tschernitz,J. Freyer +1 more
TL;DR: In this paper, a double-Read IMPATT diodes for D-band frequencies were designed and tested, and the module encapsulation technique was applied for reproducible RF impedance matching, where the active device was reduced by a titanium-Schottky contact instead of an alloyed n/sup +/- contact.
Journal ArticleDOI
Nanoplasma-enabled picosecond switches for ultrafast electronics
Mohammad Samizadeh Nikoo,Armin Jafari,Nirmana Perera,Minghua Zhu,Giovanni Santoruvo,Elison Matioli +5 more
TL;DR: An on-chip, all-electronic device based on a nanoscale plasma (nanoplasma) that enables picosecond switching of electric signals with a wide range of power levels and the generation of high-power terahertz pulses is demonstrated.
References
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Journal ArticleDOI
Simulation of GaAs IMPATT diodes including energy and velocity transport equations
TL;DR: In this paper, the average per-carrier velocity and energy were obtained from the second and third velocity moments of the Boltzmann transport equations, respectively, and the relaxation-time formulation was used to characterize the collision terms.
Journal ArticleDOI
Measurement of series resistance in IMPATT diodes
TL;DR: In this paper, the electrical series resistance of an IMPATT diode was measured based on the oscillation threshold bias current of the diode in a standard circuit and applied to GaAs diodes near 40 GHz.
Journal ArticleDOI
An Oscillator Circuit with Cap Structures for Millimeter-Wave IMPATT Diodes (Correspondence)
TL;DR: In this article, an oscillator circuit that has been particuiarly useful for testing millimeter-wave IMPATT diodes is described and results of impedance measurements performed on a scale model are presented.
Journal ArticleDOI
Molecular beam epitaxial growth of GaAs millimeter‐wave IMPATT diode material
W. E. Hoke,W. L. Labossier +1 more
TL;DR: In this article, the double-drift Read doping profile was applied to GaAs millimeter-wave IMPATT diode material, which was fabricated into single-mesa IMPATT diodes.