Journal ArticleDOI
GaN-based high voltage transistors for efficient power switching
Patrick Waltereit,Richard Reiner,Heiko Czap,Detlef Peschel,Stefan Müller,Rudiger Quay,Michael Mikulla,Oliver Ambacher +7 more
TLDR
In this paper, the static and dynamic properties of GaN-based high voltage transistors used for power switching applications are determined, and the GaN transistors on SiC and Si substrates are shown to deliver 1000 V breakdown and 95 A output current.Abstract:
We present results from GaN-based high voltage transistors used for power switching applications. The static and dynamic properties of transistors on SiC and Si substrates are determined. Overall, this technology is capable to deliver 1000 V breakdown and 95 A output current as well as a lower product of on-resistance and gate charge than conventional Si-based structures. Areas of further improvement in epitaxial growth and device processing are outlined in order to combine these high currents and high voltages in a single device. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)read more
Citations
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Journal ArticleDOI
Assembly and Packaging Technologies for High-Temperature and High-Power GaN Devices
TL;DR: In this article, a detailed analysis on the assembly and packaging technologies for the state-of-the-art GaN-based high-electron-mobility transistors, which are suitable for high-temperature and high-power applications, is given.
Journal ArticleDOI
Monolithically integrated power circuits in high-voltage GaN-on-Si heterojunction technology
Richard Reiner,Patrick Waltereit,Beatrix Weiss,Stefan Moench,M. Wespel,Stefan Müller,Rudiger Quay,Oliver Ambacher +7 more
TL;DR: In this article, a high switching transition slew rate is demonstrated by means of a monolithic power circuit with integrated gate driver for the 600 V class and on-state resistance of 53 mΩ.
Proceedings ArticleDOI
Integrated reverse-diodes for GaN-HEMT structures
Richard Reiner,Patrick Waltereit,Beatrix Weiss,M. Wespel,Rudiger Quay,Michael Schlechtweg,Michael Mikulla,Oliver Ambacher +7 more
TL;DR: In this paper, an enhanced GaN-HEMT structure that uses separated Schottky contacts as integrated free-wheeling diodes for the reverse operation is introduced.
Proceedings ArticleDOI
Soft-switching 3 MHz converter based on monolithically integrated half-bridge GaN-chip
Beatrix Weiss,Richard Reiner,Patrick Waltereit,Rudiger Quay,Oliver Ambacher,Alihosein Sepahvand,Dragan Maksimovic +6 more
TL;DR: In this paper, the authors present switching operation of a monolithically integrated half-bridge stage in a 600 V-class GaN-on-Si technology, which includes two high performance GaN HEMTs with integrated freewheeling Schottky diodes, on a total chip area of 4×4 mm2.
Journal ArticleDOI
Thermal Stability and Failure Mechanism of Schottky Gate AlGaN/GaN HEMTs
TL;DR: In this paper, the authors investigated the electrothermal stability and the predominant defect mechanism of a Schottky gate AlGaN/GaN HEMT and found that the predominant failure mechanism was hot-spot formation and subsequent thermal runaway induced by large drain-gate leakage currents.