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Giant molecular magnetocapacitance.

TLDR
Through investigating the spin-dependent charging energy of nanoscale systems, a new concept of intrinsic molecular magnetocapacitance (MC) is introduced, which can be as high as 12%.
Abstract
Capacitance of a nanoscale system is usually thought of having two contributions, a classical electrostatic contribution and a quantum contribution dependent on the density of states and/or molecular orbitals close to the Fermi energy. In this letter we demonstrate that in molecular nano-magnets and other magnetic nanoscale systems, the quantum part of the capacitance becomes spin-dependent, and is tunable by an external magnetic field. This molecular magnetocapacitance can be realized using single molecule nano-magnets and/or other nano-structures that have antiferromagnetic ground states. As a proof of principle, first-principles calculation of the nano-magnet [Mn3O(sao)3(O2CMe)(H2O)(py)3] shows that the charging energy of the high-spin state is 260 meV lower than that of the low-spin state, yielding a 6% difference in capacitance. A magnetic field of ~40T can switch the spin state, thus changing the molecular capacitance. A smaller switching field may be achieved using nanostructures with a larger moment. Molecular magnetocapacitance may lead to revolutionary device designs, e.g., by exploiting the Coulomb blockade magnetoresistance whereby a small change in capacitance can lead to a huge change in resistance.

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Density Functional Theory for Steady-State Nonequilibrium Molecular Junctions.

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Molecular analogue of the perovskite repeating unit and evidence for direct Mn III-Ce IV-Mn III exchange coupling pathway

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Optimal tunneling enhances the quantum photovoltaic effect in double quantum dots

TL;DR: In this article, the authors investigated the quantum photovoltaic effect in double quantum dots by applying the nonequilibrium quantum master equation and found that there always exists an optimal inter-dot tunneling that significantly enhances the photiovoltaic current, and that the open circuit voltage behaves approximately as the product of the eigenlevel gap and the Carnot efficiency.
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