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Journal ArticleDOI

Growth, characterisation and electrical anisotropy in layered chalcogenides GaTe and InTe

S. Pal, +1 more
- 01 Feb 1996 - 
- Vol. 97, Iss: 8, pp 725-729
TLDR
In this paper, the hole effective masses parallel and perpendicular to the layer plane were determined to be 0.46 m0 and 0.995 m0, respectively for GaTe and InTe, respectively.
About
This article is published in Solid State Communications.The article was published on 1996-02-01. It has received 46 citations till now. The article focuses on the topics: Anisotropy & Phonon scattering.

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Citations
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High-Temperature Thermoelectric Properties of NaxCoO2-δ Single Crystals

TL;DR: In this article, the authors measured the high-temperature thermoelectric properties of the NaxCoO2-? single crystal for the first time and showed that the in-plane electrical resistivity (?), the inplane thermal conductivity (S), and the in plane thermal power (S) of the single crystal can be measured in the range of 300 K to 800 K. The single crystal is prepared by a flux technique, and the resulting flaky single crystals are very thin on the c-axis.
Journal ArticleDOI

2D layered group IIIA metal chalcogenides: synthesis, properties and applications in electronics and optoelectronics

TL;DR: The remarkable properties of graphene have inspired great research interest in two-dimensional layered materials (2DLMs) with novel electronic and optical attributes as mentioned in this paper, which have shown great potential in electronics and optoelectronics.
Journal ArticleDOI

Electrical Conductivity in Soils: Underlying Phenomena

TL;DR: In this article, the authors show that surface conduction is an important contributor to global soil conduction in high specific surface soils that are saturated with low-ionic concentration pore fluids; however, pore fluid conduction prevails as the conductivity of the electrolyte and the porosity of the soil increase.
Journal ArticleDOI

Electronic properties and phase transitions in low-dimensional semiconductors

TL;DR: In this article, the authors present a review of the current state of the literature on electronic properties and phase transitions in TlX and TlMX2 (M = Ga, In; X = Se, S, Te) compounds.
References
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Journal ArticleDOI

Electrical resistivity and hall effect of single crystals of GaTe and GaSe

TL;DR: The resistivity and Hall effect of single crystals of GaTe have been investigated in the temperature range from 80° to 1000°K as mentioned in this paper, and the influence of etching and cold-working has also been studied.
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Electron–Lattice Interaction in Gallium Selenide

TL;DR: In this paper, the authors show that the interaction of holes with non-polar, fully symmetric, optical phonons governs both the Hall mobility of the carriers and the temperature shift of the direct energy gap.
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Hopping conduction in gallium selenide single crystals

TL;DR: In this article, the electrical conductivity of GaSe has been measured in the c direction and at right angles to it, and in n-type crystals a normal mobility associated with this direction is observed.
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The relationship between empty d-state density and XPS satellite intensities in nickel alloys

TL;DR: In this paper, it was shown that the d-bands of Ni and Pd tend to fill when alloyed with electropositive metals and the core level peaks become less asymmetric.
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Infrared optical properties of InTe

TL;DR: In this article, the infrared reflectivity spectra of p-type InTe single crystals were measured at room temperature for the polarization directions E ⊥ c and E | c in the wavenumber range from 55-4000 cm−1.
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