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Open AccessJournal ArticleDOI

Guided-wave intensity modulators using amplitude-and-phase perturbations

R.A. Soref, +2 more
- 01 Mar 1988 - 
- Vol. 6, Iss: 3, pp 437-444
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TLDR
In this paper, a theoretical analysis of intensity modulation in coupled waveguides and Mach-Zehnder interferometers is presented, and the predicted depth of modulation is greater than that of conventional loss-modulators over a range of Delta N or Delta E.
Abstract
A theoretical analysis of intensity modulation in coupled waveguides and Mach-Zehnder interferometers is reported. Simultaneous phase and amplitude perturbations Delta n+ iota Delta k are considered. Predictions are made about the performance of electrooptic GaAs and InP modulators controlled by the free-carrier effect ( Delta N) or by the Franz-Keldysh effect ( Delta E). The phase-dominant condition Delta n>5 Delta k is optimal. The predicted depth of modulation is greater than that of conventional loss-modulators over a range of Delta N or Delta E. >

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Citations
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Silicon-based optoelectronics

TL;DR: In this article, a review of Si-based photonic components and optoelectronic integration techniques, both hybrid and monolithic, is presented, with a focus on column IV materials (Si, Ge, C and Sn).
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The Emergence of Silicon Photonics as a Flexible Technology Platform

TL;DR: This paper will concentrate on the key technological milestones that were crucial in demonstrating the capability of silicon photonics as both a successful technical platform, as well as indicating the potential for commercial success.
Journal ArticleDOI

Silicon electro-optic modulator based on a three terminal device integrated in a low-loss single-mode SOI waveguide

TL;DR: In this paper, a novel silicon optical amplitude-phase modulator integrated into a SOI (silicon on insulator) optical waveguide and based on a three terminal electronic structure was analyzed.
References
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Journal ArticleDOI

Electrooptical effects in silicon

TL;DR: In this article, a numerical Kramers-Kronig analysis is used to predict the refractive index perturbations produced in crystalline silicon by applied electric fields or by charge carriers.
Journal ArticleDOI

Electrorefraction and electroabsorption in InP, GaAs, GaSb, InAs, and InSb

TL;DR: In this paper, effective mass theory is used to calculate electric-field-induced changes in optical refraction and absorption (the Franz-Keldysh effect) in five direct-gap III-V semiconductors: InP, GaAs, GaSb, InAs and InSb.
Journal ArticleDOI

Franz–Keldysh electrorefraction and electroabsorption in bulk InP and GaAs

TL;DR: In this article, the experimental results are described well by an effective mass approximation theory with a correction that accounts for the exponential absorption tail, and it is shown that, at least in InP, electrorefraction is under some conditions much stronger than the Pockels effect.
Journal ArticleDOI

Frequency chirping of external modulation and its reduction

TL;DR: In this paper, a general formula for frequency chirping of external intensity loss modulation which is caused by phase modulation due to an accompanied refractive index change is given, which can be reduced by optimising the optical modulation waveform.
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