High Brightness GaN-on-Si Based Blue LEDs Grown on 150 mm Si Substrates Using Thin Buffer Layer Technology
Liyang Zhang,Wei-Sin Tan,Simon Westwater,Antoine Pujol,Andrea Pinos,Samir Mezouari,Kevin Stribley,John Whiteman,John Shannon,Keith Strickland +9 more
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In this paper, the authors report on the growth of high-quality crack-free InGaN/GaN LED structure on 150 mm Si (111) substrate using thin buffer layer technology.Abstract:
The commercial adoption of GaN-on-Si light emitting diode (LED) chip technology is lagging behind incumbent sapphire substrates due to significantly longer growth time and poorer crystalline quality. To address these challenges, we report on the growth of high-quality crack-free InGaN/GaN LED structure on 150 mm Si (111) substrate using thin buffer layer technology. The total epilayer thickness is only $3.75~{\mu } \text{m}$ , offering significant growth time savings and faster manufacturing process throughput. A SiNx interlayer is inserted in the buffer layer to promote lateral overgrowth and improve material quality, resulting in full width at half maximum ${ }$ and ${ - $12{>}$ of 380 and 390 arcsec, respectively. Reducing dislocation density and optimizing KOH roughening of the n-GaN layer is found to be critical toward improving device performance. The devices were processed as 1 $\times$ 1 mm2 vertical thin film dies and mounted into a conventional 3535 package with silicone dome lens. The result is a light output power of 563 mW and an operating voltage of 3.05 V, corresponding to a wall-plug-efficiency of 52.7% when driven at 350 mA. These results attest the feasibility of thin buffer GaN-on-Si technology for solid state lighting applications.read more
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A comparative study of efficiency droop and internal electric field for InGaN blue lighting-emitting diodes on silicon and sapphire substrates.
TL;DR: Owing to its greatly reduced efficiency droop, the InGaN blue LED on silicon substrates is expected to be a good cost effective solution for future lighting technology.
Journal ArticleDOI
High-performance vertical GaN-based near-ultraviolet light-emitting diodes on Si substrates
Yuan Li,Wenliang Wang,Liegen Huang,Zheng Yulin,Xiaochan Li,Tang Xin,Wentong Xie,Xiaofeng Chen,Guoqiang Li +8 more
TL;DR: In this paper, high performance vertical GaN-based near-ultraviolet (UV) light-emitting diodes (LEDs) on Si substrates with an electroluminescence emission wavelength of 395 nm have been fabricated by designing epitaxial structures to reduce the dislocation density and enhance the electron confinement and hole injection.
Journal ArticleDOI
High-efficiency vertical-structure GaN-based light-emitting diodes on Si substrates
Wenliang Wang,Yunhao Lin,Yuan Li,Xiaochan Li,Liegen Huang,Zheng Yulin,Zhiting Lin,Haiyan Wang,Guoqiang Li +8 more
TL;DR: In this article, high-quality GaN-based light-emitting diode (LED) wafers have been grown on Si substrates by metal-organic chemical vapor deposition by designing epitaxial structures with AlN/Al0.24Ga0.76N buffer layers and a three-dimensional (3D) GaN layer.
Journal ArticleDOI
A review of blue light emitting diodes for future solid state lighting and visible light communication applications
TL;DR: In this paper, the rapid progress being made in the developments of organic/inorganic blue light emitting diodes (LEDs) is reviewed, which exhibits outstanding electrical and optical properties such as low forward driving voltage, high light output power, high brightness and high internal quantum efficiency (IQE).
Journal ArticleDOI
Wafer-scale crack-free 10 µm-thick GaN with a dislocation density of 5.8 × 107 cm−2 grown on Si
Jianxun Liu,Yingnan Huang,Yingnan Huang,Xiujian Sun,Xiaoning Zhan,Qian Sun,Qian Sun,Hongwei Gao,Meixin Feng,Yu Zhou,Yu Zhou,Masao Ikeda,Hui Yang,Hui Yang +13 more
TL;DR: In this article, a wafer-scale crack-free 10 µm-thick successive GaN with a low TDD of 5.8 × 107 cm−2 was achieved for the first time.
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