T
Takashi Egawa
Researcher at Nagoya Institute of Technology
Publications - 394
Citations - 7477
Takashi Egawa is an academic researcher from Nagoya Institute of Technology. The author has contributed to research in topics: Metalorganic vapour phase epitaxy & Chemical vapor deposition. The author has an hindex of 39, co-authored 385 publications receiving 6642 citations. Previous affiliations of Takashi Egawa include Oki Electric Industry.
Papers
More filters
Journal ArticleDOI
The 2018 GaN power electronics roadmap
Hiroshi Amano,Yannick Baines,Matteo Borga,T Bouchet,Paul R. Chalker,Matthew Charles,Kevin J. Chen,Nadim Chowdhury,Rongming Chu,Carlo De Santi,Maria Merlyne De Souza,Stefaan Decoutere,L. Di Cioccio,Bernd Eckardt,Takashi Egawa,Patrick Fay,Joseph J. Freedsman,Louis J. Guido,Oliver Häberlen,Geoff Haynes,Thomas Heckel,Dilini Hemakumara,Peter A. Houston,Jie Hu,Mengyuan Hua,Qingyun Huang,Alex Q. Huang,Sheng Jiang,Hiroji Kawai,Dan Kinzer,Martin Kuball,Ashwani Kumar,K. B. Lee,Xu Li,Denis Marcon,Martin Marz,Robert McCarthy,Gaudenzio Meneghesso,Matteo Meneghini,Erwan Morvan,Akira Nakajima,Ekkanath Madathil Sankara Narayanan,Stephen Oliver,Tomas Palacios,Daniel Piedra,Marc Plissonnier,Rekha Reddy,Min Sun,Iain G. Thayne,A. Torres,Nicola Trivellin,Vineet Unni,Michael J. Uren,Marleen Van Hove,David J. Wallis,David J. Wallis,Jingshan Wang,Jinqiao Xie,Shuichi Yagi,Shu Yang,Chris Youtsey,Ruiyang Yu,Enrico Zanoni,Stefan Zeltner,Yuhao Zhang +64 more
TL;DR: This collection of GaN technology developments is not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve.
Journal ArticleDOI
Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78–4.77 eV) by spectroscopic ellipsometry and the optical transmission method
G. Yu,Guocan Wang,Hiroyasu Ishikawa,Masayoshi Umeno,Tetsuo Soga,Takashi Egawa,Junji Watanabe,Takashi Jimbo +7 more
TL;DR: In this article, the authors used spectroscopic ellipsometry (SE) together with the optical transmission method to determine the refractive index n and absorption coefficient α of undoped gallium nitride film over the spectral range of 0.78-4.77 eV of photon energy.
Journal ArticleDOI
GaN on Si Substrate with AlGaN/AlN Intermediate Layer
TL;DR: In this article, a single crystal GaN thin film was successfully grown on a Si (111) substrate by means of atmospheric pressure metalorganic chemical vapor deposition (MOCVD) and the fullwidth at half maximum (FWHM) of the double-crystal X-ray rocking curve for GaN(0004) was 600 arcsec.
Journal ArticleDOI
Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator–semiconductor interfaces with low interface state density
TL;DR: In this paper, the electrical properties of electron beam (EB) evaporated silicon dioxide (SiO2)/n-GaN, plasma enhanced chemical vapor deposited (PECVD) SiO2/n-GAN, and PECVD silicon nitride (Si3N4)/nGaN interfaces were investigated using high frequency capacitance-voltage measurements.
Journal ArticleDOI
Thermal stability of GaN on (111)Si substrate
TL;DR: In this paper, the authors studied thermal annealing effects of low-temperature grown GaN (LT-GaN) on Si substrate by use of the two-step growth technique.