Journal ArticleDOI
High-density 1.54 μm InAs/InGaAlAs/InP(100) based quantum dots with reduced size inhomogeneity
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TLDR
In this paper, self-assembled InAs quantum dots (QDs) were grown by solid source molecular beam epitaxy and the impact of growth parameters like the growth temperature of the InGaAlAs nucleation layer, V/III ratio and growth rate during growth of QD layers were carefully investigated by using atomic force microscopy and photoluminescence spectroscopy.About:
This article is published in Journal of Crystal Growth.The article was published on 2015-09-01. It has received 36 citations till now. The article focuses on the topics: Molecular beam epitaxy & Quantum dot.read more
Citations
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Journal ArticleDOI
Toward Atomic-Resolution Quantum Measurements with Coherently Shaped Free Electrons.
TL;DR: The quantum theory of interactions between shaped electrons and arbitrary qubit states in materials is developed, and how the postinteraction electron energy spectrum enables measuring the qubit state and the decoherence or relaxation times is described.
Journal ArticleDOI
Large linewidth reduction in semiconductor lasers based on atom-like gain material
Tali Septon,Annette Becker,Sutapa Gosh,Gal Shtendel,Vitalii Sichkovskyi,Florian Schnabel,Anna Sengül,Marko Bjelica,Bernd Witzigmann,Johann Peter Reithmaier,Gadi Eisenstein +10 more
TL;DR: In this article, the spectral and power characteristics of a single-mode InAs/AlGaInAs/InP QD distributed feedback laser operating at 1.5μm were described.
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Epitaxial growth of high quality InP on Si substrates: The role of InAs/InP quantum dots as effective dislocation filters
Bei Shi,Qiang Li,Kei May Lau +2 more
TL;DR: In this article, multiple InAs/InP quantum dots were used as dislocation filters to minimize the unwanted defects within the InP crystal, and the defect density was reduced to 3'×'108/cm2, providing an improved optical property of active photonic devices on Si substrates.
Journal ArticleDOI
Temperature-Insensitive High-Speed Directly Modulated 1.55- $\mu \text{m}$ Quantum Dot Lasers
S. Banyoudeh,A. Abdollahinia,Ori Eyal,Florian Schnabel,Vitalii Sichkovskyi,Gadi Eisenstein,Johann Peter Reithmaier +6 more
TL;DR: In this article, the modulation properties and temperature stability of short cavity ridge waveguide lasers based on high-quality InAs quantum dots exhibiting a total modal gain of ~90 cm at room temperature and up to 36 mW are reported.
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Enhanced optical properties of InAs/InAlGaAs/InP quantum dots grown by metal-organic chemical vapor deposition using a double-cap technique
Bei Shi,Kei May Lau +1 more
TL;DR: In this paper, the effects of double-cap procedure on the optical properties of an InAs/InAlGaAs quantum dots (QDs) system grown by metal-organic chemical vapor deposition (MOCVD) have been investigated by atomic force microscopy (AFM) and room temperature photoluminescence (RT-PL) spectroscopy.
References
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Journal ArticleDOI
Long-wavelength InP-based quantum-dash lasers
TL;DR: In this paper, self-assembled InAs quantum-dash (QD) lasers with emission wavelengths between 1.54 and 1.78 /spl mu/m were grown by gas source molecular beam epitaxy.
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InP based lasers and optical amplifiers with wire-/dot-like active regions
Johann Peter Reithmaier,Andre Somers,S. Deubert,R. Schwertberger,W. Kaiser,Alfred Forchel,Michel Calligaro,P. Resneau,Olivier Parillaud,Shailendra Bansropun,Michel Krakowski,R. Alizon,D. Hadass,A. Bilenca,Hanan Dery,Vissarion Mikhelashvili,Gadi Eisenstein,Mariangela Gioannini,Ivo Montrosset,T.W. Berg,M. van der Poel,Jesper Mørk,Bjarne Tromborg +22 more
TL;DR: In this paper, a brief overview of the current status and recent results of quantum-dash lasers are reported, including topics like dash formation and material growth, device performance of lasers and optical amplifiers, static and dynamic properties and fundamental material and device modelling.
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Telecom-wavelength (1.5 μm) single-photon emission from InP-based quantum dots
TL;DR: In this article, the authors demonstrate pronounced single-photon emission from InAs/AlGaInAs/InP quantum dots (QDs) at wavelengths above 1.5μm that are compatible with standard long-distance fiber communication.
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Fabrication of ultra-high density InAs-stacked quantum dots by strain-controlled growth on InP(3 1 1)B substrate
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Epitaxial growth and optical characterization of InAs/InGaAsP/InP self-assembled quantum dots
TL;DR: In this paper, five stacks of InAs quantum dots (QDs) with InGaAsP barriers were grown on (100) InP and luminescence characteristics were analyzed, and cross-sectional transmission electron microscopy showed that small dots with a lateral size of ∼30 nm and a height of ∼3 nm are formed with an areal density of ∼5×1010 cm−2.