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High rate etching of SiC using inductively coupled plasma reactive ion etching in SF6-based gas mixtures
F. A. Khan,I. Adesida +1 more
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In this article, inductively coupled plasma (ICP) reactive ion etching of SiC was investigated using SF6 plasmas and anisotropic etch profiles with highly smooth surfaces free of micromasking effects were obtained.Abstract:
Inductively coupled plasma (ICP) reactive ion etching of SiC was investigated using SF6 plasmas. Etch rates were studied as a function of substrate bias voltage (−3 to −500 V), ICP coil power (500–900 W), and chamber pressure (1–6 mT). The highest etch rate (970 nm/min) for SiC yet reported was achieved. Anisotropic etch profiles with highly smooth surfaces free of micromasking effects were obtained. The addition of O2 to the SF6 plasma was found to slightly increase the etch rate.read more
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References
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Journal ArticleDOI
The reaction of fluorine atoms with silicon
TL;DR: In this paper, a detailed model of silicon gasification is presented which accounts for the low atomic fluorine reaction probability (0.00168 at room temperature) and formation of SiF2 as a direct product.
Journal ArticleDOI
A Review of SiC Reactive Ion Etching in Fluorinated Plasmas
TL;DR: In this article, a review of reactive ion etching of SiC polytypes (3C and 6H) is presented, with the primary emphasis on the 3C and the 6H polytypes, but some results on the 4H polytype are included.
Journal ArticleDOI
Reactive Ion Etching of SiC Thin Films by Mixtures of Fluorinated Gases and Oxygen
W. ‐S. Pan,Andrew J. Steckl +1 more
TL;DR: In this article, the optical emission spectrum of the RF plasma and the plasma-induced dc bias were monitored to explore the etching mechanisms and the best anisotropic profile was obtained by using gas in the RIE mode.
Journal ArticleDOI
Evaluation of damage induced by inductively coupled plasma etching of 6H–SiC using Au Schottky barrier diodes
TL;DR: In this paper, the impact of substrate dc bias on the surface damage of 6H-SiC induced by inductively coupled plasma (ICP) etching with a CF4/O2 gas mixture has been evaluated by Au Schottky barrier diodes.
Journal ArticleDOI
ICP etching of SiC
J. J. Wang,Eric Lambers,Stephen J. Pearton,Mikael Östling,Carl-Mikael Zetterling,J. M. Grow,Fan Ren +6 more
TL;DR: In this article, a number of different plasma chemistries, including NF3/O2, SF6/O 2 and SF6-O 2, were investigated for dry etching of 6H and 3C-SiC in a Inductively Coupled Plasma tool.