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Journal ArticleDOI

High speed memory behavior and reliability of an amorphous As2S3 film doped with Ag

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This article is published in Physica Status Solidi (a).The article was published on 1980-10-16. It has received 86 citations till now. The article focuses on the topics: Reliability (statistics) & Amorphous solid.

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Citations
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Journal ArticleDOI

Photodoping of amorphous chalcogenides by metals

TL;DR: In this article, the results of experimental investigations of the photodoping of amorphous chalcogenides by metals, and in particular by silver, are reviewed, and the results in the literature are analysed, giving answers to such fundamental questions as the following: where is the actinic light which is efficient for photodissolution absorbed? Which is the diffusion-limiting step? What is the state of the diffusing species (neutral atoms or ions)?
Patent

Integrated circuit device and fabrication using metal-doped chalcogenide materials

Jiutao Li, +1 more
TL;DR: In this article, metal-doped chalcogenide layers are formed by using a plasma to induce diffusion of metal into a chalkogenide layer concurrently with metal deposition, which reduces contamination concerns and physical damage resulting from moving the device substrate from tool to tool.
Patent

PCRAM memory cell and method of making same

TL;DR: An inverted PCRAM cell is formed by plating the bottom electrode, made of copper for example, with a conductive material, such as silver as discussed by the authors, and the chalcogenide material is disposed over the plated electrode and subjected to a conversion process.
Patent

Complementary bit PCRAM sense amplifier and method of operation

TL;DR: In this paper, a method and apparatus for sensing the resistance state of a Programmable Conductor Random Access Memory (PCRAM) element using complementary PCRAM elements, one holding the resistance states being sensed and the other holding a complementary resistance state.
Patent

Apparatus and method for dual cell common electrode PCRAM memory device

John T. Moore
TL;DR: In this article, two PCRAM cells which use a common anode between them are disclosed, and two memory cells can be accessed separately to store two bits of data which can be read and written.
References
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Journal ArticleDOI

Polarity‐dependent memory switching and behavior of Ag dendrite in Ag‐photodoped amorphous As2S3 films

TL;DR: In this article, high cyclical reproducibility in polarity-dependent switching and memory function was obtained, where both electrodes (Mo and Ag) are bridged by Ag dendrite which originates as the result of Ag photodoping.
Journal ArticleDOI

On the reliability of amorphous chalcogenide switching devices

TL;DR: In this article, the lifetime of a thin amorphous As-Te-Ge film sandwiched between two molybdenum electrodes was investigated by subsequent switching and the number of switching events from the beginning of the test until a prefixed change in switching voltage appeared, defined as the "lifetime".
Book ChapterDOI

Switching and Memory in Amorphous Semiconductors

TL;DR: In particular, the use of reversible structural transformations in these alloys for binary information storage has motivated intensive study of the chemistry, morphology, and kinetics of phase separation and vitrification as mentioned in this paper.
Journal ArticleDOI

The kinetics of photodissolution of silver in amorphous As2S3 Films

TL;DR: In this article, the authors investigated the kinetics of photodissolution of Ag in amorphous As2S3 by measuring the electrical resistance of the dissolving Ag layer and by ion backscattering.
Journal ArticleDOI

The Optical and Electrical Properties of Metal Photodoped Chalcogenide Glasses

TL;DR: In this paper, the optical and electrical properties of photo-doped chalcogenide glasses were studied and the results indicated that the metals photodoped in the glasses behaved as structural modifiers of the glasses, and that the state of density in the gap was increased by the metal photodoping.
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