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Journal ArticleDOI

High Tolerance of BST Thin Film Based Varactor Under Neutron Irradiation

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TLDR
In this paper, the authors report neutron irradiation resistance of the barium strontium titanate (BST) thin-film-based varactor under different neutron fluences.
Abstract
We report neutron irradiation resistance of the barium strontium titanate (BST) thin-film-based varactor under different neutron fluences. BST thin films were deposited on sapphire substrate by RF magnetron sputtering and gold interdigital capacitor (IDC) electrodes were patterned with the photolithography technique. Capacitance-voltage ( $C$ – $V$ ) and leakage current characteristics were measured at several neutron fluences. A small change in capacitance is observed at different fluences. The changes are attributed to the radiation-induced defect dipoles and other charged defects, which serve as effective domain wall pinning sites. We supplemented this macroscopic $C$ – $V$ behavior of BST varactor with investigation through X-ray diffraction and atomic force microscopy for their structural and morphological changes, respectively. This paper shows that BST varactor can be used in neutron environment due to its high tolerance.

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Citations
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Fast Neutron Radiation Damage Effects on High Resistivity Silicon Junction Detectors. Revision

Zheng Li, +1 more
TL;DR: In this paper, the frequency dependent C-V effects and the electrical field profiles after high neutron fluence irradiation were investigated using several defect levels in the band gap, and it was found that the detector leakage current increases linearly with the frequency.
Journal ArticleDOI

Study of ZnO/BST interface for thin-film transistor (TFT) applications

TL;DR: In this article, the potential use of (Ba,Sr)TiO3 as a gate-dielectric in ZnO based thin-film transistors (TFTs) for low-voltage operation was investigated.
References
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Journal ArticleDOI

Physics of thin-film ferroelectric oxides

TL;DR: In this article, the authors introduce the current state of development in the application of ferroelectric thin films for electronic devices and discuss the physics relevant for the performance and failure of these devices.
Journal ArticleDOI

RF MEMS switches and switch circuits

TL;DR: In this paper, the authors concentrate on electrostatic switches at 0.1-100 GHz with high reliability (100 million to 10 billion cycles) and wafer-scale manufacturing techniques.
Journal ArticleDOI

Oxygen-vacancy-related low-frequency dielectric relaxation and electrical conduction in B i : S r T i O 3

TL;DR: In this article, three sets of oxygen vacancies related dielectric peaks (peaks A, B, and C) were measured from 10 to 800 K. The results show that the Maxwell-Wagner polarization is not the main mechanism, and the Skanavi's model also cannot be directly applied.
Journal ArticleDOI

Grain-size effect on structure and phase transformations for barium titanate

TL;DR: In this article, the results of an investigation into the grain-size dependence of lattice structure for barium titanate (BaTiO) ceramics prepared by a sol-gel method were reported.
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